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EBE41AE4ACFA-8E-E 参数 Datasheet PDF下载

EBE41AE4ACFA-8E-E图片预览
型号: EBE41AE4ACFA-8E-E
PDF下载: 下载PDF文件 查看货源
内容描述: 注册4GB DDR2 SDRAM DIMM [4GB Registered DDR2 SDRAM DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 27 页 / 234 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBE41AE4ACFA  
-8E  
-6E  
DDR2-667 (5-5-5)  
Speed bin  
DDR2-800 (5-5-5)  
Parameter  
Symbol  
tRAS  
min.  
max.  
min.  
max.  
Unit  
ns  
Notes  
Active to precharge command  
Active to auto-precharge delay  
45  
70000  
45  
70000  
tRAP  
tRCD min.  
tRCD min.  
ns  
Active bank A to active bank B command  
period  
tRRD  
7.5  
7.5  
ns  
Four active window period  
/CAS to /CAS command delay  
Write recovery time  
tFAW  
tCCD  
tWR  
35  
2
37.5  
2
ns  
nCK  
ns  
15  
15  
Auto precharge write recovery + precharge  
time  
WR + RU  
(tRP/tCK(avg))  
WR + RU  
(tRP/tCK(avg))  
tDAL  
nCK  
1, 9  
14  
Internal write to read command delay  
tWTR  
7.5  
7.5  
ns  
Internal read to precharge command delay tRTP  
7.5  
7.5  
ns  
Exit self-refresh to a non-read command  
Exit self-refresh to a read command  
tXSNR  
tRFC + 10  
200  
tRFC + 10  
200  
ns  
tXSRD  
tXP  
nCK  
Exit precharge power down to any non-read  
command  
2
2
nCK  
nCK  
nCK  
Exit active power down to read command  
tXARD  
tXARDS  
2
2
3
Exit active power down to read command  
(slow exit/low power mode)  
8 AL  
7 AL  
2, 3  
CKE minimum pulse width (high and low  
pulse width)  
tCKE  
3
3
nCK  
Output impedance test driver delay  
MRS command to ODT update delay  
tOIT  
0
0
12  
12  
0
0
12  
12  
ns  
ns  
tMOD  
Auto-refresh to active/auto-refresh  
command time  
tRFC  
127.5  
127.5  
ns  
Average periodic refresh interval  
(0°C TC +85°C)  
tREFI  
7.8  
3.9  
7.8  
3.9  
µs  
µs  
ns  
(+85°C < TC +95°C)  
tREFI  
Minimum time clocks remains ON after CKE  
asynchronously drops low  
tIS + tCK(avg)  
+ tIH  
tIS + tCK(avg)  
+ tIH  
tDELAY  
Notes: 1. For each of the terms above, if not already an integer, round to the next higher integer.  
2. AL: Additive Latency.  
3. MRS A12 bit defines which active power down exit timing to be applied.  
4. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the  
VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the device under test.  
5. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the  
VIL(DC) level for a rising signal and VIH(DC) for a falling signal applied to the device under test.  
CK  
DQS  
/CK  
/DQS  
tIS  
tIH  
tIS  
tIH  
tDS tDH  
tDS tDH  
VDDQ  
VDDQ  
VIH (AC)(min.)  
VIH (DC)(min.)  
VREF  
VIH (AC)(min.)  
VIH (DC)(min.)  
VREF  
VIL (DC)(max.)  
VIL (AC)(max.)  
VSS  
VIL (DC)(max.)  
VIL (AC)(max.)  
VSS  
Input Waveform Timing 1 (tDS, tDH)  
Input Waveform Timing 2 (tIS, tIH)  
Data Sheet E1078E40 (Ver. 4.0)  
17  
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