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EBE41AE4ACFA-6E-E 参数 Datasheet PDF下载

EBE41AE4ACFA-6E-E图片预览
型号: EBE41AE4ACFA-6E-E
PDF下载: 下载PDF文件 查看货源
内容描述: 注册4GB DDR2 SDRAM DIMM [4GB Registered DDR2 SDRAM DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 27 页 / 234 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBE41AE4ACFA  
Parameter  
Symbol Grade  
max.  
Unit  
mA  
Test condition  
tCK = tCK (IDD);  
Refresh command at every tRFC (IDD) interval;  
CKE is H, /CS is H between valid commands;  
Other control and address bus inputs are SWITCHING;  
Data bus inputs are SWITCHING  
-8E  
IDD5  
7438  
7033  
Auto-refresh current  
-6E  
Self Refresh Mode;  
CK and /CK at 0V;  
Self-refresh current  
IDD6  
371  
mA  
mA  
CKE 0.2V;  
Other control and address bus inputs are FLOATING;  
Data bus inputs are FLOATING  
all bank interleaving reads, IOUT = 0mA;  
BL = 4, CL = CL(IDD), AL = tRCD (IDD) 1 × tCK(IDD);  
tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD (IDD),  
tFAW = tFAW (IDD), tRCD = 1 × tCK (IDD);  
CKE is H, /CS is H between valid commands;  
Address bus inputs are STABLE during DESELECTs;  
Data pattern is same as IDD4W;  
Operating current  
(Bank interleaving)  
-8E  
IDD7  
8173  
7551  
-6E  
Notes: 1. IDD specifications are tested after the device is properly initialized.  
2. Input slew rate is specified by AC Input Test Condition.  
3. IDD parameters are specified with ODT disabled.  
4. Data bus consists of DQ, DM, DQS, /DQS, RDQS and /RDQS. IDD values must be met with all  
combinations of EMRS bits 10 and 11.  
5. Definitions for IDD  
L is defined as VIN VIL (AC) (max.)  
H is defined as VIN VIH (AC) (min.)  
STABLE is defined as inputs stable at an H or L level  
FLOATING is defined as inputs at VREF = VDDQ/2  
SWITCHING is defined as:  
inputs changing between H and L every other clock cycle (once per two clocks) for address and control  
signals, and inputs changing between H and L every other data transfer (once per clock) for DQ signals  
not including masks or strobes.  
6. Refer to AC Timing for IDD Test Conditions.  
AC Timing for IDD Test Conditions  
For purposes of IDD testing, the following parameters are to be utilized.  
DDR2-800  
DDR2-667  
Parameter  
5-5-5  
5
5-5-5  
5
Unit  
tCK  
ns  
CL (IDD)  
tRCD (IDD)  
tRC (IDD)  
12.5  
57.5  
7.5  
15  
60  
ns  
tRRD (IDD)  
tFAW (IDD)  
tCK (IDD)  
7.5  
37.5  
3
ns  
35  
ns  
2.5  
ns  
tRAS (min.)(IDD)  
tRAS (max.)(IDD)  
tRP (IDD)  
45  
45  
ns  
70000  
12.5  
127.5  
70000  
15  
ns  
ns  
tRFC (IDD)  
127.5  
ns  
Data Sheet E1078E40 (Ver. 4.0)  
13  
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