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EBE41RE4AAHA-5C-E 参数 Datasheet PDF下载

EBE41RE4AAHA-5C-E图片预览
型号: EBE41RE4AAHA-5C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 注册4GB DDR2 SDRAM DIMM ( 512M字× 72位, 2级) [4GB Registered DDR2 SDRAM DIMM (512M words x 72 bits, 2 Ranks)]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 22 页 / 196 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EBE41RE4AAHA-5C-E的Datasheet PDF文件第2页浏览型号EBE41RE4AAHA-5C-E的Datasheet PDF文件第3页浏览型号EBE41RE4AAHA-5C-E的Datasheet PDF文件第4页浏览型号EBE41RE4AAHA-5C-E的Datasheet PDF文件第5页浏览型号EBE41RE4AAHA-5C-E的Datasheet PDF文件第7页浏览型号EBE41RE4AAHA-5C-E的Datasheet PDF文件第8页浏览型号EBE41RE4AAHA-5C-E的Datasheet PDF文件第9页浏览型号EBE41RE4AAHA-5C-E的Datasheet PDF文件第10页  
EBE41RE4AAHA  
Byte No. Function described  
Minimum active to precharge time  
(tRAS)  
Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value  
Comments  
45ns  
30  
0
0
1
0
1
1
0
1
2DH  
-5C  
-4A  
0
0
0
0
1
0
0
0
1
0
0
0
0
1
0
0
28H  
02H  
40ns  
2GB  
31  
32  
Module rank density  
Address and command setup time  
before clock (tIS)  
-5C  
0
0
0
0
0
0
0
0
1
0
1
1
1
0
0
0
1
1
0
1
0
0
1
1
0
1
1
0
0
0
0
0
0
0
0
1
1
0
0
0
25H  
35H  
38H  
48H  
10H  
0.25ns*1  
0.35ns*1  
0.38ns*1  
0.48ns*1  
0.10ns*1  
-4A  
Address and command hold time after  
clock (tIH)  
33  
-5C  
-4A  
Data input setup time before clock  
(tDS)  
-5C  
34  
35  
-4A  
0
0
0
0
0
1
1
0
0
0
1
0
0
1
1
1
15H  
23H  
0.15ns*1  
0.23ns*1  
Data input hold time after clock (tDH)  
-5C  
-4A  
0
0
0
0
1
1
0
1
1
1
0
1
0
0
0
0
28H  
3CH  
0.28ns*1  
15ns*1  
36  
37  
Write recovery time (tWR)  
Internal write to read command delay  
(tWTR)  
-5C  
0
0
0
1
1
1
1
0
1EH  
7.5ns*1  
-4A  
0
0
0
0
1
0
0
1
1
1
0
1
0
1
0
0
28H  
1EH  
10ns*1  
7.5ns*1  
TBD  
Internal read to precharge command  
delay (tRTP)  
38  
39  
40  
Memory analysis probe characteristics 0  
0
0
0
0
0
0
0
0
0
1
0
1
0
0
00H  
06H  
Extension of Byte 41 and 42  
0
0
0
0
1
0
0
0
Active command period (tRC)  
-5C  
41  
0
0
1
0
0
0
0
1
1
1
0
0
1
1
1
1
1
0
1
0
0
1
0
1
0
1
0
1
1
1
1
0
1
0
0
0
1
1
0
1
1
0
0
1
1
0
0
1
0
3CH  
37H  
7FH  
80H  
1EH  
23H  
28H  
60ns*1  
-4A  
55ns*1  
Auto refresh to active/  
Auto refresh command cycle (tRFC)  
42  
43  
44  
127.5ns*1  
8ns*1  
SDRAM tCK cycle max. (tCK max.)  
Dout to DQS skew  
-5C  
0.30ns*1  
0.35ns*1  
0.40ns*1  
-4A  
Data hold skew (tQHS)  
-5C  
45  
-4A  
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
1
1
1
0
0
1
1
0
0
0
1
0
0
1
1
0
0
2DH  
0FH  
00H  
10H  
0.45ns*1  
46  
PLL relock time  
15µs  
47 to 61  
62  
SPD Revision  
Rev. 1.0  
Checksum for bytes 0 to 62  
-5C  
63  
0
1
0
1
1
1
1
1
1
1
1
1
1
1
1
1
0
1
1
0
1
0
0
1
7EH  
F8H  
7FH  
-4A  
Continuation  
code  
64 to 65  
Manufacturer’s JEDEC ID code  
66  
Manufacturer’s JEDEC ID code  
Manufacturer’s JEDEC ID code  
1
0
1
0
1
0
1
0
1
0
1
0
1
0
0
0
FEH  
00H  
Elpida Memory  
67 to 71  
Data Sheet E0629E20 (Ver. 2.0)  
6