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EBE41RE4AAHA-5C-E 参数 Datasheet PDF下载

EBE41RE4AAHA-5C-E图片预览
型号: EBE41RE4AAHA-5C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 注册4GB DDR2 SDRAM DIMM ( 512M字× 72位, 2级) [4GB Registered DDR2 SDRAM DIMM (512M words x 72 bits, 2 Ranks)]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 22 页 / 196 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBE41RE4AAHA  
CKE (input pin)  
CKE controls power down and self-refresh. The power down and the self-refresh commands are entered when the  
CKE is driven low and exited when it resumes to high.  
The CKE level must be kept for 1 CK cycle at least, that is, if CKE changes at the cross point of the CK rising edge  
and the VREF level with proper setup time tIS, at the next CK rising edge CKE level must be kept with proper hold  
time tIH.  
DQ, CB (input and output pins)  
Data are input to and output from these pins.  
DQS (input and output pin)  
DQS and /DQS provide the read data strobes (as output) and the write data strobes (as input).  
VDD (power supply pins)  
1.8V is applied. (VDD is for the internal circuit.)  
VDDSPD (power supply pin)  
1.8V is applied (For serial EEPROM).  
VSS (power supply pin)  
Ground is connected.  
/RESET(input pin)  
LVCMOS reset input. When /RESET is Low, all registers are reset.  
Detailed Operation Part and Timing Waveforms  
Refer to the EDE1104AASE, EDE1108AASE datasheet (E0404E). DM pins of component device fixed to VSS level  
on the module board. DIMM /CAS latency = component CL + 1 for registered type.  
Data Sheet E0629E20 (Ver. 2.0)  
19  
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