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EBE21UE8ACUA-8G-E 参数 Datasheet PDF下载

EBE21UE8ACUA-8G-E图片预览
型号: EBE21UE8ACUA-8G-E
PDF下载: 下载PDF文件 查看货源
内容描述: 2GB DDR2 SDRAM SO- DIMM [2GB DDR2 SDRAM SO-DIMM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 27 页 / 262 K
品牌: ELPIDA [ ELPIDA MEMORY ]
 浏览型号EBE21UE8ACUA-8G-E的Datasheet PDF文件第13页浏览型号EBE21UE8ACUA-8G-E的Datasheet PDF文件第14页浏览型号EBE21UE8ACUA-8G-E的Datasheet PDF文件第15页浏览型号EBE21UE8ACUA-8G-E的Datasheet PDF文件第16页浏览型号EBE21UE8ACUA-8G-E的Datasheet PDF文件第18页浏览型号EBE21UE8ACUA-8G-E的Datasheet PDF文件第19页浏览型号EBE21UE8ACUA-8G-E的Datasheet PDF文件第20页浏览型号EBE21UE8ACUA-8G-E的Datasheet PDF文件第21页  
EBE21UE8ACUA  
-8E  
-8G  
-6E  
DDR2-667 (5-5-5)  
Speed bin  
Parameter  
DDR2-800 (5-5-5)  
DDR2-800 (6-6-6)  
Symbol  
tDSH  
min.  
0.2  
max.  
min.  
0.2  
max.  
min.  
0.2  
max.  
Unit Notes  
DQS falling edge hold time from  
CK  
tCK  
(avg)  
Mode register set command cycle  
time  
tMRD  
2
2
2
nCK  
tCK  
(avg)  
Write postamble  
Write preamble  
tWPST  
tWPRE  
0.4  
0.35  
0.6  
0.4  
0.6  
0.4  
0.6  
tCK  
(avg)  
0.35  
250  
175  
0.35  
275  
200  
Address and control input hold time tIH (base) 250  
ps  
5
4
Address and control input setup  
tIS (base) 175  
time  
ps  
tCK  
(avg)  
Read preamble  
Read postamble  
tRPRE  
tRPST  
0.9  
0.4  
1.1  
0.9  
0.4  
1.1  
0.9  
0.4  
1.1  
11  
12  
tCK  
(avg)  
0.6  
0.6  
0.6  
Active to precharge command  
Active to auto-precharge delay  
tRAS  
tRAP  
45  
70000  
45  
70000  
45  
70000  
ns  
ns  
tRCD min.  
tRCD min.  
tRCD min.  
Active bank A to active bank B  
command period  
tRRD  
7.5  
7.5  
7.5  
ns  
Four active window period  
/CAS to /CAS command delay  
Write recovery time  
tFAW  
tCCD  
tWR  
35  
2
35  
2
37.5  
2
ns  
nCK  
ns  
15  
15  
15  
WR +  
RU (tRP/  
tCK (avg))  
WR +  
RU (tRP/  
tCK (avg))  
WR +  
RU (tRP/  
tCK (avg))  
Auto precharge write recovery +  
precharge time  
tDAL  
nCK 1, 9  
Internal write to read command  
delay  
tWTR  
tRTP  
7.5  
7.5  
7.5  
ns  
Internal read to precharge  
command delay  
7.5  
7.5  
7.5  
ns  
Exit self-refresh to a non-read  
command  
tXSNR  
tXSRD  
tXP  
tRFC + 10  
tRFC + 10  
tRFC + 10  
ns  
Exit self-refresh to a read  
command  
200  
2
200  
2
200  
2
nCK  
nCK  
Exit precharge power down to any  
non-read command  
Exit active power down to read  
command  
tXARD  
2
2
2
nCK 3  
Exit active power down to read  
command  
tXARDS 8 AL  
8 AL  
7 AL  
nCK 2, 3  
(slow exit/low power mode)  
CKE minimum pulse width (high  
and low pulse width)  
tCKE  
3
0
0
3
0
0
3
0
0
nCK  
ns  
Output impedance test driver delay tOIT  
MRS command to ODT update  
delay  
12  
12  
12  
12  
12  
12  
tMOD  
ns  
Auto-refresh to active/auto-refresh  
command time  
tRFC  
127.5  
127.5  
127.5  
ns  
Average periodic refresh interval  
(0°C TC +85°C)  
tREFI  
tREFI  
7.8  
3.9  
7.8  
3.9  
7.8  
3.9  
µs  
µs  
(+85°C < TC +95°C)  
Minimum time clocks remains ON  
after CKE asynchronously drops  
low  
tIS +  
tIS +  
tCK(avg)  
+ tIH  
tIS +  
tCK(avg)  
+ tIH  
tDELAY tCK(avg)  
ns  
+ tIH  
Data Sheet E1217E10 (Ver. 1.0)  
17  
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