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EBE21FE8ACFT-6E-E 参数 Datasheet PDF下载

EBE21FE8ACFT-6E-E图片预览
型号: EBE21FE8ACFT-6E-E
PDF下载: 下载PDF文件 查看货源
内容描述: 2GB全缓冲DIMM [2GB Fully Buffered DIMM]
分类和应用:
文件页数/大小: 22 页 / 190 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBE21FE8ACFT  
Serial PD Matrix for FB-DIMM  
Byte No. Function described  
Byte value  
116  
Hex value  
92H  
0
Number of serial PD bytes written / SPD device size / CRC coverage  
1
SPD revision  
Revision 1.1  
11H  
2
Key byte / DRAM device type  
DDR2 SDRAM FB-DIMM 09H  
VDD = 1.8V, VCC = 1.5V 12H  
14-row, 10-column, 8-bank 45H  
3
Voltage levels of this assembly  
4
SDRAM addressing  
5
Module physical attributes  
8.2mm  
24H  
07H  
11H  
00H  
01H  
04H  
0CH  
20H  
33H  
3CH  
42H  
3CH  
72H  
50H  
3CH  
1EH  
3CH  
00H  
B4H  
F0H  
FEH  
01H  
1EH  
1EH  
03H  
07H  
01H  
6
Module Type / Thickness  
FB-DIMM  
2 ranks / 8bits  
7
Module organization  
8
Fine timebase (FTB) dividend / divisor  
Medium timebase dividend  
9
1
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
Medium timebase divisor  
4
SDRAM minimum cycle time (tCK (min.))  
SDRAM maximum cycle time (tCK (max.))  
SDRAM /CAS latencies supported  
3.00ns  
8ns  
CL = 3, 4, 5  
15ns  
SDRAM minimum /CAS latencies time (tCAS)  
SDRAM write recovery times supported  
SDRAM write recovery time (tWR)  
WR = 2 to 5  
15ns  
SDRAM write latencies supported  
WL = 2 to 8  
AL = 0 to 4  
15ns  
SDRAM additive latencies supported  
SDRAM minimum /RAS to /CAS delay (tRCD)  
SDRAM minimum row active to row active delay (tRRD)  
SDRAM minimum row precharge time (tRP)  
SDRAM upper nibbles for tRAS and tRC  
SDRAM minimum active to precharge time (tRAS)  
SDRAM minimum auto-refresh to active /auto-refresh time (tRC)  
SDRAM minimum refresh recovery time delay (tRFC), LSB  
SDRAM minimum refresh recovery time delay (tRFC), MSB  
SDRAM Internal write to read command delay (tWTR)  
SDRAM Internal read to precharge command delay (tRTP)  
SDRAM burst lengths supported  
7.5ns  
15ns  
45ns  
60ns  
127.5ns  
127.5ns  
7.5ns  
7.5ns  
BL = 4, 8  
ODT = 50, 75, 150Ω  
Supported  
SDRAM terminations supported  
SDRAM drivers supported  
SDRAM average refresh interval (tREFI) / double refresh mode bit /  
high temperature self-refresh rate support indication  
32  
7.8µs Double/HT refresh C2H  
33  
34  
35  
36  
37  
38  
39  
40  
41  
Tcasemax (TC (max.)) delta / DT4R4W delta  
Psi T-A SDRAM at still air  
SDRAM DT0  
95°C/ 0.40°C  
51H  
××  
××  
××  
××  
××  
××  
××  
××  
3
*
3
*
3
*
SDRAM DT2Q  
3
*
SDRAM DT2P  
3
*
SDRAM DT3N  
3
*
SDRAM DT4R / mode bit  
SDRAM DT5B  
3
*
3
*
SDRAM DT7  
Data Sheet E1090E30 (Ver. 3.0)  
18  
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