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EBE20AE4ACWA 参数 Datasheet PDF下载

EBE20AE4ACWA图片预览
型号: EBE20AE4ACWA
PDF下载: 下载PDF文件 查看货源
内容描述: 注册2GB DDR2 SDRAM DIMM [2GB Registered DDR2 SDRAM DIMM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 27 页 / 227 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBE20AE4ACWA  
CKE (input pin)  
CKE controls power down and self-refresh. The power down and the self-refresh commands are entered when the  
CKE is driven low and exited when it resumes to high.  
The CKE level must be kept for 1 CK cycle at least, that is, if CKE changes at the cross point of the CK rising edge  
and the VREF level with proper setup time tIS, at the next CK rising edge CKE level must be kept with proper hold  
time tIH.  
DQ, CB (input and output pins)  
Data are input to and output from these pins.  
DQS (input and output pin)  
DQS and /DQS provide the read data strobes (as output) and the write data strobes (as input).  
VDD (power supply pins)  
1.8V is applied. (VDD is for the internal circuit.)  
VDDSPD (power supply pin)  
1.8V is applied (For serial EEPROM).  
VSS (power supply pin)  
Ground is connected.  
/RESET(input pin)  
LVCMOS reset input. When /RESET is Low, all registers are reset.  
Par_IN (Parity input pin)  
Parity bit for the address and control bus.  
/Err_Out (Error output pin)  
Parity error found on the address and control bus.  
Detailed Operation Part and Timing Waveforms  
Refer to the EDE1104ACBG, EDE1108ACBG, EDE1116ACBG datasheet (E1173E). DM pins of component device  
fixed to VSS level on the module board. DIMM /CAS latency = component CL + 1 for registered type.  
Data Sheet E1395E10 (Ver. 1.0)  
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