EBE11UE6ACUA
Parameter
Symbol
IDD5
Grade
max.
Unit
mA
Test condition
Auto-refresh current
(Another rank is in IDD2P)
-8E, -8G 1200
-6E 1160
tCK = tCK (IDD);
Refresh command at every tRFC (IDD) interval;
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Auto-refresh current
(Another rank is in IDD3N)
-8E, -8G 1520
-6E
IDD5
IDD6
mA
mA
1440
Self Refresh Mode;
CK and /CK at 0V;
Self-refresh current
80
CKE ≤ 0.2V;
Other control and address bus inputs are FLOATING;
Data bus inputs are FLOATING
all bank interleaving reads, IOUT = 0mA;
Operating current
-8E, -8G 1440
-6E 1280
BL = 4, CL = CL(IDD), AL = tRCD (IDD) −1 × tCK (IDD);
tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD(IDD),
tFAW = tFAW (IDD), tRCD = 1 × tCK (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are STABLE during DESELECTs;
Data pattern is same as IDD4W;
IDD7
IDD7
mA
mA
(Bank interleaving)
(Another rank is in IDD2P)
Operating current
-8E, -8G 1760
-6E 1560
(Bank interleaving)
(Another rank is in IDD3N)
Notes: 1. IDD specifications are tested after the device is properly initialized.
2. Input slew rate is specified by AC Input Test Condition.
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, /DQS, RDQS and /RDQS. IDD values must be met with all
combinations of EMRS bits 10 and 11.
5. Definitions for IDD
L is defined as VIN ≤VIL (AC) (max.)
H is defined as VIN ≥VIH (AC) (min.)
STABLE is defined as inputs stable at an H or L level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
inputs changing between H and L every other clock cycle (once per two clocks) for address and control
signals, and inputs changing between H and L every other data transfer (once per clock) for DQ signals
not including masks or strobes.
6. Refer to AC Timing for IDD Test Conditions.
AC Timing for IDD Test Conditions
For purposes of IDD testing, the following parameters are to be utilized.
DDR2-800
DDR2-800
DDR2-667
Parameter
5-5-5
5
6-6-6
6
5-5-5
5
Unit
tCK
ns
CL (IDD)
tRCD (IDD)
tRC (IDD)
12.5
57.5
10
15
15
60
60
ns
tRRD (IDD)
tFAW (IDD)
tCK (IDD)
10
10
ns
45
45
50
ns
2.5
2.5
45
3
ns
tRAS (min.)(IDD)
tRAS (max.)(IDD)
tRP (IDD)
45
45
ns
70000
12.5
127.5
70000
15
70000
15
ns
ns
tRFC (IDD)
127.5
127.5
ns
Data Sheet E1216E10 (Ver. 1.0)
12
ELPIDA [ ELPIDA MEMORY ]
