EBE11FD8AHFT, EBE11FD8AHFE, EBE11FD8AHFL
Serial PD Matrix for FB-DIMM
Byte No. Function described
Byte value
116
Hex value
92H
0
1
2
3
4
5
6
7
8
9
10
Number of serial PD bytes written / SPD device size / CRC coverage
SPD revision
Revision 1.1
11H
Key byte / DRAM device type
Voltage levels of this assembly
SDRAM addressing
DDR2 SDRAM FB-DIMM 09H
VDD = 1.8V, VCC = 1.5V 12H
14-row, 10-column
8.2mm
44H
24H
07H
11H
00H
01H
04H
Module physical attributes
Module Type / Thickness
Module organization
FB-DIMM
2 ranks / 8bits
Fine timebase (FTB) dividend / divisor
Medium timebase dividend
Medium timebase divisor
1
4
SDRAM minimum cycle time (tCK (min.))
-6E
11
3.00ns
0CH
-5C
3.75ns
8ns
0FH
20H
33H
12
13
SDRAM maximum cycle time (tCK (max.))
SDRAM /CAS latencies supported
-6E
CL = 3, 4, 5
-5C
CL = 3, 4
15ns
23H
3CH
42H
14
15
SDRAM minimum /CAS latencies time (tCAS)
SDRAM write recovery times supported
-6E
WR = 2 to 5
-5C
WR = 2 to 4
15ns
32H
3CH
42H
16
17
SDRAM write recovery time (tWR)
SDRAM write latencies supported
WL = 2 to 5
18
19
20
21
22
23
24
25
26
27
28
29
30
31
SDRAM additive latencies supported
AL = 0 to 3
15ns
40H
3CH
1EH
3CH
00H
B4H
F0H
A4H
01H
1EH
1EH
03H
07H
01H
SDRAM minimum /RAS to /CAS delay (tRCD)
SDRAM minimum row active to row active delay (tRRD)
SDRAM minimum row precharge time (tRP)
SDRAM upper nibbles for tRAS and tRC
7.5ns
15ns
SDRAM minimum active to precharge time (tRAS)
SDRAM minimum auto-refresh to active /auto-refresh time (tRC)
SDRAM minimum refresh recovery time delay (tRFC), LSB
SDRAM minimum refresh recovery time delay (tRFC), MSB
SDRAM Internal write to read command delay (tWTR)
SDRAM Internal read to precharge command delay (tRTP)
SDRAM burst lengths supported
45ns
60ns
105ns
105ns
7.5ns
7.5ns
BL = 4, 8
ODT = 50, 75, 150Ω
Supported
SDRAM terminations supported
SDRAM drivers supported
SDRAM average refresh interval (tREFI) / double refresh mode bit /
high temperature self-refresh rate support indication
32
7.8µs Double/HT refresh C2H
33
34
Tcasemax (TC (max.)) delta / DT4R4W delta
Psi T-A SDRAM at still air
95°C/ 0.40°C
51H
3
*
××
Preliminary Data Sheet E1000E30 (Ver. 3.0)
18
ELPIDA [ ELPIDA MEMORY ]
