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EBE11FD8AGFN 参数 Datasheet PDF下载

EBE11FD8AGFN图片预览
型号: EBE11FD8AGFN
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB全缓冲DIMM [1GB Fully Buffered DIMM]
分类和应用:
文件页数/大小: 22 页 / 189 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBE11FD8AGFD, EBE11FD8AGFN  
AMB Component Timing  
For purposes of IDD testing, the following parameters are to be utilized.  
Parameter  
Symbol  
min.  
typ.  
max.  
4
Units  
clks  
Note  
tEI  
propagate  
EI Assertion pass-thru timing  
EI deassertion pass-thru timing  
EI assertion duration  
Resample pass-thru time  
Resynch pass-thru Time  
Bit lock Interval  
tEID  
tEI  
bit lock  
clks  
100  
clks  
TBD  
TBD  
ns  
ns  
tBitLock  
119  
154  
frames  
frames  
Frame lock Interval  
tFrameLock  
Note: 1. The EI stands for Electrical Idle.  
Power Specification Parameter and Test Conditions  
-6E  
667  
-5C  
533  
Frequency (Mbps)  
Parameter  
Power  
Supply  
Symbol  
max.  
2.60  
max.  
2.20  
Unit  
A
Conditions  
Note  
@1.5V  
@1.8V  
Total  
L0 state, idle (0 BW)  
Primary channel enabled,  
Idle Current,  
single or last  
DIMM  
Idd_Idle_0  
Secondary channel disabled  
1.57  
6.41  
1.45  
5.55  
A
CKE high. Command and address lines stable.  
DRAM clock active.  
W
@1.5V  
@1.8V  
Total  
3.40  
1.58  
7.70  
3.00  
1.46  
6.84  
A
L0 state, idle (0 BW)  
Primary and secondary channels enabled  
CKE high. Command and address lines stable.  
DRAM clock active.  
Idle Current, first  
DIMM  
Idd_Idle_1  
A
W
@1.5V  
@1.8V  
3.90  
3.24  
3.40  
3.25  
A
A
L0 state  
50% DRAM BW, 67% read, 33% write.  
Primary and secondary channels enabled.  
DRAM clock active, CKE high.  
Active Power  
Idd_Active_1  
Total  
11.64 10.86  
W
A
L0 state  
@1.5V  
@1.8V  
Total  
3.70  
1.34  
7.72  
3.20  
1.24  
6.74  
50% DRAM BW to downstream DIMM,  
67% read, 33% write.  
Active Power,  
data pass through  
Idd_Active_2  
A
Primary and secondary channels enabled.  
CKE high. Command and address lines stable.  
DRAM clock active.  
W
Primary and secondary channels enabled.  
100% toggle on all channel lanes  
DRAMs idle. 0 BW.  
@1.5V  
@1.8V  
Total  
4.00  
1.50  
8.49  
3.50  
1.37  
7.46  
A
Idd_Training  
(for AMB spec.  
Not in SPD)  
Training  
A
CKE high, Command and address lines stable.  
DRAM clock active.  
W
Preliminary Data Sheet E0867E20 (Ver. 2.0)  
11  
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