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EBE10RD4ABFA-4C 参数 Datasheet PDF下载

EBE10RD4ABFA-4C图片预览
型号: EBE10RD4ABFA-4C
PDF下载: 下载PDF文件 查看货源
内容描述: [暂无描述]
分类和应用:
文件页数/大小: 22 页 / 171 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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PRELIMINARY DATA SHEET  
1GB Registered DDR2 SDRAM DIMM  
EBE10RD4ABFA (128M words × 72 bits, 1 Rank)  
Description  
Features  
The EBE10RD4ABFA is a 128M words × 72 bits, 1  
rank DDR2 SDRAM Module, mounting 18 pieces of  
DDR2 SDRAM sealed in FBGA (µBGA) package.  
Read and write operations are performed at the cross  
points of the CK and the /CK. This high-speed data  
transfer is realized by the 4bits prefetch-pipelined  
architecture. Data strobe (DQS and /DQS) both for  
read and write are available for high speed and reliable  
data bus design. By setting extended mode register,  
the on-chip Delay Locked Loop (DLL) can be set  
enable or disable. This module provides high density  
mounting without utilizing surface mount technology.  
Decoupling capacitors are mounted beside each FBGA  
(µBGA) on the module board.  
240-pin socket type dual in line memory module  
(DIMM)  
PCB height: 30.0mm  
Lead pitch: 1.0mm  
1.8V power supply  
Data rate: 533Mbps/400Mbps (max.)  
1.8 V (SSTL_18 compatible) I/O  
Double-data-rate architecture: two data transfers per  
clock cycle  
Bi-directional, data strobe (DQS and /DQS) is  
transmitted /received with data, to be used in  
capturing data at the receiver  
DQS is edge aligned with data for READs; center  
aligned with data for WRITEs  
Differential clock inputs (CK and /CK)  
Note: Do not push the components or drop the  
modules in order to avoid mechanical defects,  
which may result in electrical defects.  
DLL aligns DQ and DQS transitions with CK  
transitions  
Commands entered on each positive CK edge; data  
referenced to both edges of DQS  
Four internal banks for concurrent operation  
(Component)  
Burst length: 4, 8  
/CAS latency (CL): 3, 4, 5  
Auto precharge option for each burst access  
Auto refresh and self refresh modes  
7.8µs average periodic refresh interval  
Posted CAS by programmable additive latency for  
better command and data bus efficiency  
Off-Chip-Driver Impedance Adjustment and On-Die-  
Termination for better signal quality  
/DQS can be disabled for single-ended Data Strobe  
operation  
1 piece of PLL clock driver, 2 pieces of register driver  
and 1 piece of serial EEPROM (2k bits EEPROM) for  
Presence Detect (PD)  
Document No. E0366E50 (Ver. 5.0)  
Date Published November 2003 (K) Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2003