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EBD52UC8AKFA-5C-E 参数 Datasheet PDF下载

EBD52UC8AKFA-5C-E图片预览
型号: EBD52UC8AKFA-5C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 512MB无缓冲DDR SDRAM DIMM ( 64M字× 64位, 2级) [512MB Unbuffered DDR SDRAM DIMM (64M words x 64 bits, 2 Ranks)]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 19 页 / 188 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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PRELIMINARY DATA SHEET  
512MB Unbuffered DDR SDRAM DIMM  
EBD52UC8AKFA-5-E (64M words × 64 bits, 2 Ranks)  
Description  
Features  
The EBD52UC8AKFA is 64M words × 64 bits, 2 ranks  
Double Data Rate (DDR) SDRAM unbuffered module,  
mounting 16 pieces of 256M bits DDR SDRAM sealed  
in TSOP package. Read and write operations are  
performed at the cross points of the CK and the /CK.  
This high-speed data transfer is realized by the 2 bits  
prefetch-pipelined architecture. Data strobe (DQS)  
both for read and write are available for high speed and  
reliable data bus design. By setting extended mode  
register, the on-chip Delay Locked Loop (DLL) can be  
set enable or disable. This module provides high  
density mounting without utilizing surface mount  
184-pin socket type dual in line memory module  
(DIMM)  
PCB height: 31.75mm  
Lead pitch: 1.27mm  
Lead-free  
2.5V power supply  
Data rate: 400Mbps (max.)  
2.5 V (SSTL_2 compatible) I/O  
Double Data Rate architecture; two data transfers per  
clock cycle  
Bi-directional, data strobe (DQS) is transmitted  
/received with data, to be used in capturing data at  
the receiver  
technology.  
Decoupling capacitors are mounted  
beside each TSOP on the module board.  
Data inputs and outputs are synchronized with DQS  
4 internal banks for concurrent operation  
(Components)  
DQS is edge aligned with data for READs; center  
aligned with data for WRITEs  
Differential clock inputs (CK and /CK)  
DLL aligns DQ and DQS transitions with CK  
transitions  
Commands entered on each positive CK edge; data  
referenced to both edges of DQS  
Data mask (DM) for write data  
Auto precharge option for each burst access  
Programmable burst length: 2, 4, 8  
Programmable /CAS latency (CL): 3  
Programmable output driver strength: normal/weak  
Refresh cycles: (8192 refresh cycles /64ms)  
7.8µs maximum average periodic refresh interval  
2 variations of refresh  
Auto refresh  
Self refresh  
Document No. E0601E10 (Ver. 1.0)  
Date Published October 2004 (K) Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2004