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E1750E31 参数 Datasheet PDF下载

E1750E31图片预览
型号: E1750E31
PDF下载: 下载PDF文件 查看货源
内容描述: 2G位DDR3L SDRAM [2G bits DDR3L SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 32 页 / 606 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDJ2108EEBG, EDJ2116EEBG  
Notes: 1. The CL setting and CWL setting result in tCK(avg)min and tCK(avg)max requirements. When making a selection of  
tCK(avg), both need to be fulfilled: Requirements from CL setting as well as requirements from CWL setting.  
2. tCK(avg)min limits: Since /CAS latency is not purely analog - data and strobe output are synchronized by the DLL - all  
possible intermediate frequencies may not be guaranteed. An application should use the next smaller JEDEC standard  
tCK(avg) value (3.0, 2.5, 1.875, 1.5, or 1.25ns) when calculating CL(nCK) = tAA(ns) / tCK(avg)(ns), rounding up to the  
next ‘Supported CL’.  
3. tCK(avg)max limits: Calculate tCK(avg) + tAA(max)/CL selected and round the resulting tCK(avg) down to the next valid  
speed bin (i.e. 3.3ns or 2.5ns or 1.875ns or 1.25ns). This result is tCK(avg)max corresponding to CL selected.  
4. Reserved’ settings are not allowed. User must program a different value.  
5. Any DDR3-1066 speed bin also supports functional operation at lower frequencies as shown in the table DDR3-1066  
Speed Bins which are not subject to production tests but verified by design/characterization.  
6. Any DDR3-1333 speed bin also supports functional operation at lower frequencies as shown in the table DDR3-1333  
Speed Bins which is not subject to production tests but verified by design/characterization.  
7. Any DDR3-1600 speed bin also supports functional operation at lower frequencies as shown in the table DDR3-1600  
Speed Bins which is not subject to production tests but verified by design/characterization.  
8. Any DDR3-1866 speed bin also supports functional operation at lower frequencies as shown in the table DDR3-1866  
Speed Bins which is not subject to production tests but verified by design/characterization.  
9. tREFI depends on operating case temperature (TC).  
10. For devices supporting optional down binning to CL = 7 and CL = 9, tAA/tRCD/tRP(min) must be 13.125 ns or lower. SPD  
settings must be programmed to match.  
11. DDR3-800 AC timing apply if DRAM operates at lower than 800 MT/s data rate.  
Data Sheet E1750E31 (Ver. 3.1)  
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