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ELM7SHU04MB-EL 参数 Datasheet PDF下载

ELM7SHU04MB-EL图片预览
型号: ELM7SHU04MB-EL
PDF下载: 下载PDF文件 查看货源
内容描述: 高速CMOS逻辑IC ELM7SHU04xB无缓冲变频器 [HIGH SPEED CMOS LOGIC IC ELM7SHU04xB Unbuffer Inverter]
分类和应用:
文件页数/大小: 3 页 / 308 K
品牌: ELM-TECH [ ELM Technology Corporation ]
 浏览型号ELM7SHU04MB-EL的Datasheet PDF文件第2页浏览型号ELM7SHU04MB-EL的Datasheet PDF文件第3页  
HIGH SPEED CMOS LOGIC IC  
■General description  
Unbuffer Inverter  
ELM7SHU04xB  
ELM7SHU04xB is CMOS unbuffer inverter which is suitable for battery-operated devices because of its low  
voltage and ultra high speed operation. The low power consumption contributes to longer battery life, which  
allows longtime operation of devices. The internal circuit which is 1-stage unbuffer type can be used for crystal  
oscillation.  
■Features  
• Same electrical characteristic and high speed operation as 74VHC series  
• Low consumption current  
• Wide power voltage range  
• Wide input voltage range  
• High speed  
: Idd=1.0μA(Max.)(Top=25°C)  
: 2.0V to 5.5V  
: Vih=5.5V(Max.)(Vdd=0 to 5.5V)  
: Tpd=2ns(Typ.)(Vdd=5.0V)  
: SOT-25, SC-70-5(SOT-353)  
• Small package  
• Same function and pin configuration as ELM7SxxB  
■Application  
• Cell phones  
• Digital cameras  
• Portable electrical appliances like PDA, etc.  
• Computers and peripherals  
• Digital electrical appliances like LCD TV sets, DVD recorders/players, STB, etc.  
• Modification inside print board, adjustment of timing, solution to noise  
• Power voltage change from 5V to 3V  
■Selection guide  
ELM7SHU04xB-EL  
Symbol  
a
Function  
Package  
U04: Unbuffer Inverter  
ELM7SH U04 x B - EL  
M: SOT-25  
T: SC-70-5(SOT-353)  
b
↑ ↑ ↑  
d
a b c  
c
d
Product version  
Taping direction  
B
EL: Refer to PKG file  
■Maximum absolute ratings  
Parameter  
Power supply voltage  
Input voltage  
Symbol  
Vdd  
Vin  
Vout  
Iik  
Iok  
Iout  
Idd, Ignd  
Pd  
Limit  
Unit  
V
V
-0.5 to +6.0  
-0.5 to +6.0  
-0.5 to Vdd+0.5  
Output voltage  
V
-
Input protection diode current  
Output parasitic diode current  
Output current  
VDD/GND current  
Power dissipation  
20  
mA  
mA  
mA  
mA  
mW  
°C  
±
20  
±
25  
±
50  
150  
Storage temperature  
Tstg  
-65 to +150  
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