Single P-channel MOSFET
ELM34403AA-N
■Electrical characteristics
Ta=25°C
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
-55
V
Vds=-44V, Vgs=0V
Idss
-1
Zero gate voltage drain current
μA
Vds=-36V,Vgs=0V,Tj=125°C
-10
±
±
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss Vds=0V, Vgs= 20V
250 nA
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
-1.0 -1.5 -2.5
-20
V
A
1
1
Vgs=-10V, Id=-4.5A
Rds(on)
60
90
9
80 mΩ
150 mΩ
S
Static drain-source on-resistance
Vgs=-4.5V, Id=-3.5A
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
Gfs Vds=-10V, Id=-4.5A
1
1
Vsd Is=If, Vgs=0V
-1
V
A
A
Is
-1.3
-2.6
Ism
3
Ciss
760
90
pF
pF
pF
Output capacitance
Coss Vgs=0V, Vds=-30V, f=1MHz
Crss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
40
Qg
15.0
2.5
3.0
7
nC
nC
nC
ns
2
2
2
2
2
2
2
Vgs=-10V, Vds=-27.5V
Id=-4.5A
Gate-source charge
Qgs
Gate-drain charge
Qgd
Turn-on delay time
td(on)
14
20
34
22
Turn-on rise time
tr
td(off)
tf
10
ns
Vgs=-10V, Vds=-20V
Id≈-1A, Rgen=6Ω
Turn-off delay time
19
ns
Turn-off fall time
12
ns
Body diode reverse recovery time
Body diode reverse recovery charge
trr
If=-3.5A, dl/dt=100A/μs
15.5
7.9
ns
Qrr If=-3.5A, dl/dt=100A/μs
nC
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4 - 2