Single P-channel MOSFET
ELM34407AA-N
■General description
■Features
ELM34407AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
• Vds=-30V
• Id=-8A
• Rds(on) < 32mΩ (Vgs=-10V)
• Rds(on) < 55mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Symbol
Limit
-30
Unit
V
Note
Drain-source voltage
Gate-source voltage
Vds
Vgs
±
25
V
Ta=25°C
Ta=70°C
-8
-7
Continuous drain current
Pulsed drain current
Id
Idm
A
A
-30
3
Ta=25°C
Ta=70°C
2.5
Power dissipation
Pd
W
°C
1.3
Junction and storage temperature range
Tj, Tstg
-55 to 150
■Thermal characteristics
Parameter
Symbol
Rθjc
Typ.
Max.
Unit
Note
Maximum junction-to-case
Maximum junction-to-ambient
Steady-state
Steady-state
25
50
°C/W
°C/W
Rθja
■Pin configuration
■Circuit
D
SOP-8(TOP VIEW)
Pin No.
Pin name
SOURCE
SOURCE
SOURCE
GATE
1
2
3
4
5
6
7
8
1
2
3
4
8
7
6
5
G
DRAIN
DRAIN
DRAIN
DRAIN
S
4 - 1
ELM-TECH [ ELM Technology Corporation ]
