Dual N-channel MOSFET
ELM34806AA-N
■Electrical characteristics
Ta=25°C
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
40
V
Vds=32V, Vgs=0V
Idss
1
Zero gate voltage drain current
μA
Vds=30V, Vgs=0V, Tj=55°C
10
±
±
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss Vds=0V, Vgs= 20V
100 nA
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=10V, Vds=5V
1.0
20
1.5
3.0
V
A
1
1
Vgs=10V, Id=7A
Rds(on)
21
30
24
28 mΩ
42 mΩ
S
Static drain-source on-resistance
Vgs=4.5V, Id=6A
Forward transconductance
Diode forward voltage
Max.body-diode continuous current
Pulsed current
Gfs Vds=10V, Id=5A
1
1
Vsd If=Is, Vgs=0V
1
V
A
A
Is
1.3
2.6
Ism
3
DYNAMIC PARAMETERS
Input capacitance
Ciss
790
175
65
pF
pF
pF
Output capacitance
Coss Vgs=0V, Vds=10V, f=1MHz
Crss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Qg
16.0
2.5
2.1
2.2
nC
nC
nC
ns
2
2
2
2
2
2
2
Gate-source charge
Qgs Vgs=5V, Vds=20V, Id=7A
Gate-drain charge
Qgd
Turn-on delay time
td(on)
4.4
Turn-on rise time
tr
Vgs=10V, Vds=20V, Id≈1A
7.5 15.0 ns
11.8 21.3 ns
11.0 20.0 ns
Turn-off delay time
td(off) Rgen=6Ω
tf
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
trr
If=5A, dl/dt=100A/μs
15.5
7.9
ns
Qrr
nC
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4 - 2
ELM-TECH [ ELM Technology Corporation ]
