Single N-channel MOSFET
ELM13402CA-S
■General description
■Features
ELM13402CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
• Vds=30V
• Id=4A (Vgs=10V)
• Rds(on) < 55mΩ (Vgs=10V)
• Rds(on) < 70mΩ (Vgs=4.5V)
• Rds(on) < 110mΩ (Vgs=2.5V)
■Maximum absolute ratings
Parameter
Symbol
Limit
30
Unit
V
Note
Drain-source voltage
Gate-source voltage
Vds
Vgs
±
12
V
Ta=25°C
Ta=70°C
4.0
3.4
Continuous drain current
Pulsed drain current
Id
Idm
A
A
1
2
1
15
Ta=25°C
Ta=70°C
1.4
Power dissipation
Pd
W
°C
1.0
Junction and storage temperature range
Tj, Tstg
-55 to 150
■Thermal characteristics
Parameter
Symbol
Rθja
Typ.
Max.
90
Unit
Note
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
t≤10s
70
100
63
°C/W
°C/W
°C/W
1
3
Steady-state
Steady-state
125
80
Rθjl
■Pin configuration
■Circuit
D
SOT-23(TOP VIEW)
3
Pin No.
Pin name
GATE
1
2
3
SOURCE
DRAIN
G
1
2
S
4 - 1
ELM-TECH [ ELM Technology Corporation ]
