EL5421C
Quad 12MHz Rail-to-Rail Input-Output Buffer
Absolute Maximum Ratings (T = 25°C)
A
Values beyond absolute maximum ratings can cause the device to be pre-
maturely damaged. Absolute maximum ratings are stress ratings only and
functional device operation is not implied
Maximum Die Temperature
Storage Temperature
Operating Temperature
Power Dissipation
+125°C
-65°C to +150°C
-40°C to +85°C
See Curves
Supply Voltage between VS+ and VS-
Input Voltage
+18V
VS- - 0.5V, VS+ +0.5V
30mA
ESD Voltage
2kV
Maximum Continuous Output Current
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Characteristics
VS+ = +5V, VS- = -5V, RL = 10kΩ and CL = 10pF to 0V, TA = 25°C unless otherwise specified.
Parameter
Description
Condition
Min
Typ
Max
12
Unit
Input Characteristics
VOS
TCVOS
IB
Input Offset Voltage
VCM = 0V
[1]
2
5
mV
µV/°C
nA
Average Offset Voltage Drift
Input Bias Current
Input Impedance
VCM = 0V
2
50
RIN
CIN
AV
1
GΩ
Input Capacitance
Voltage Gain
1.35
pF
-4.5V ≤ VOUT ≤ 4.5V
0.995
1.005
-4.85
V/V
Output Characteristics
VOL
VOH
ISC
Output Swing Low
IL = -5mA
-4.92
4.92
V
V
Output Swing High
Short Circuit Current
IL = 5mA
Short to GND [2]
4.85
±80
±120
mA
Power Supply Performance
PSRR
IS
Power Supply Rejection Ratio
Supply Current (Per Buffer)
V
S is moved from ±2.25V to ±7.75V
60
7
80
dB
No Load
500
750
µA
Dynamic Performance
SR
tS
Slew Rate [3]
-4.0V ≤ VOUT ≤ 4.0V, 20% to 80%
VO = 2V Step
10
500
12
V/µs
ns
Settling to +0.1%
-3dB Bandwidth
Channel Separation
BW
CS
RL = 10kΩ, CL = 10pF
f = 5MHz
MHz
dB
75
1. Measured over the operating temperature range
2. Parameter is guaranteed (but not test) by design and characterization data
3. Slew rate is measured on rising and falling edges
2
ELANTEC [ ELANTEC SEMICONDUCTOR ]
