EL5220C, EL5420C
12MHz Rail-to-Rail Input-Output Op Amps
Electrical Characteristics
VS+ = 5V, VS-= 0V, RL = 10kW and CL = 10pF to 2.5V, TA = 25°C unless otherwise specified.
Parameter
Description
Condition
Min
Typ
Max
10
Unit
Input Characteristics
VOS
Input Offset Voltage
VCM = 2.5V
[1]
2
5
mV
µV/°C
nA
TCVOS
IB
Average Offset Voltage Drift
Input Bias Current
VCM = 2.5V
2
50
RIN
Input Impedance
1
GW
pF
CIN
Input Capacitance
1.35
CMIR
CMRR
AVOL
Common-Mode Input Range
Common-Mode Rejection Ratio
Open-Loop Gain
-0.5
45
+5.5
150
V
for VIN from -0.5V to +5.5V
66
95
dB
0.5V £ VOUT £+ 4.5V
75
dB
Output Characteristics
VOL
VOH
ISC
Output Swing Low
IL = -5mA
IL = +5mA
80
mV
V
Output Swing High
Short Circuit Current
Output Current
4.85
60
4.92
±120
±30
mA
mA
IOUT
Power Supply Performance
PSRR
IS
Power Supply Rejection Ratio
Supply Current (Per Amplifier)
VS is moved from 4.5V to 15.5V
No load
80
dB
500
750
µA
Dynamic Performance
SR
Slew Rate [2]
1V £ VOUT £ 4V, 20% to 80%
(AV = +1), VO = 2V step
RL = 10kW, CL = 10pF
RL = 10 kW, CL = 10pF
RL = 10 kW, CL = 10 pF
f = 5MHz
10
500
12
8
V/µs
ns
tS
Settling to +0.1% (AV = +1)
-3dB Bandwidth
BW
GBWP
PM
CS
MHz
MHz
°
Gain-Bandwidth Product
Phase Margin
50
75
Channel Separation
dB
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
Electrical Characteristics
VS+ = 15V, VS- = 0V, RL = 10kW and CL = 10pF to 7.5V, TA = 25°C unless otherwise specified.
Parameter
Description
Condition
Min
Typ
Max
14
Unit
Input Characteristics
VOS
Input Offset Voltage
VCM = 7.5V
[1]
2
5
mV
µV/°C
nA
TCVOS
IB
Average Offset Voltage Drift
Input Bias Current
VCM = 7.5V
2
50
RIN
Input Impedance
1
GW
pF
CIN
Input Capacitance
1.35
CMIR
CMRR
AVOL
Common-Mode Input Range
Common-Mode Rejection Ratio
Open-Loop Gain
-0.5
53
+15.5
150
V
for VIN from -0.5V to +15.5V
72
95
dB
0.5V £ VOUT £ 14.5V
75
dB
Output Characteristics
VOL
VOH
Output Swing Low
Output Swing High
IL = -5mA
IL = +5mA
80
mV
V
14.85
14.92
3
ELANTEC [ ELANTEC SEMICONDUCTOR ]
