EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Absolute Maximum Ratings (T = 25°C)
A
Values beyond absolute maximum ratings can cause the device to be pre-
maturely damaged. Absolute maximum ratings are stress ratings only and
functional device operation is not implied
Maximum Die Temperature
Storage Temperature
Operating Temperature
Power Dissipation
+125°C
-65°C to +150°C
-40°C to +85°C
See Curves
Supply Voltage between VS+ and VS-
Input Voltage
+18V
VS- - 0.5V, VS+ +0.5V
30mA
ESD Voltage
2kV
Maximum Continuous Output Current
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Characteristics
VS+ = +5V, VS- = -5V, RL = 10kΩ and CL = 10pF to 0V, TA = 25°C unless otherwise specified.
Parameter
Description
Condition
Min
Typ
Max
12
Unit
Input Characteristics
VOS
TCVOS
IB
Input Offset Voltage
VCM = 0V
[1]
2
5
mV
µV/°C
nA
Average Offset Voltage Drift
Input Bias Current
Input Impedance
VCM = 0V
2
50
RIN
CIN
AV
1
GΩ
Input Capacitance
Voltage Gain
1.35
pF
-4.5V ≤ VOUT ≤ 4.5V
0.995
4.85
60
1.005
-4.85
V/V
Output Characteristics
VOL
VOH
ISC
Output Swing Low
IL = -5mA
IL = 5mA
-4.92
4.92
120
V
V
Output Swing High
Short Circuit Current
Short to GND
mA
Power Supply Performance
PSRR
IS
Power Supply Rejection Ratio
Supply Current (Per Buffer)
V
S is moved from 2.25V to 7.75V
80
dB
No Load
500
750
µA
Dynamic Performance
SR
tS
Slew Rate [2]
-4.0V ≤ VOUT ≤ 4.0V, 20% to 80%
VO=2V Step
7
10
500
12
V/µs
ns
Settling to +0.1%
-3dB Bandwidth
Channel Separation
BW
CS
RL = 10kΩ, CL = 10pF
f = 5MHz
MHz
dB
75
1. Measured over the operating temperature range
2. Slew rate is measured on rising and falling edges
2
ELANTEC [ ELANTEC SEMICONDUCTOR ]
