EL5221C
EL5221C
Dual 12MHz Rail-to-Rail Input-Output Buffer
Absolute Maximum Ratings
(T
A
= 25°C)
Values beyond absolute maximum ratings can cause the device to be pre-
maturely damaged. Absolute maximum ratings are stress ratings only and
functional device operation is not implied
+18V
Supply Voltage between V
S
+ and V
S
-
Input Voltage
V
S
- - 0.5V, V
S
+ +0.5V
Maximum Continuous Output Current
30mA
Maximum Die Temperature
Storage Temperature
Operating Temperature
Power Dissipation
ESD Voltage
+125°C
-65°C to +150°C
-40°C to +85°C
See Curves
2kV
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: T
J
= T
C
= T
A
Electrical Characteristics
V
S+
= +5V, V
S
- = -5V, R
L
= 10kΩ and C
L
= 10pF to 0V, T
A
= 25°C unless otherwise specified.
Parameter
Input Characteristics
V
OS
TCV
OS
I
B
R
IN
C
IN
A
V
V
OL
V
OH
I
SC
PSRR
I
S
SR
t
S
BW
CS
Input Offset Voltage
Average Offset Voltage Drift
Input Bias Current
Input Impedance
Input Capacitance
Voltage Gain
Output Swing Low
Output Swing High
Short Circuit Current
Power Supply Rejection Ratio
Supply Current (Per Buffer)
Slew Rate
[2]
Settling to +0.1%
-3dB Bandwidth
Channel Separation
-4.5V
≤
V
OUT
≤
4.5V
I
L
= -5mA
I
L
= 5mA
Short to GND
V
S
is moved from ±2.25V to ±7.75V
No Load
-4.0V
≤
V
OUT
≤
4.0V, 20% to 80%
V
O
=2V Step
R
L
= 10kΩ, C
L
= 10pF
f = 5MHz
7
60
4.85
0.995
-4.92
4.92
±120
80
500
10
500
12
75
750
V
CM
= 0V
[1]
Description
Condition
Min
Typ
2
5
2
1
1.35
Max
12
50
Unit
mV
µV/°C
nA
GΩ
pF
V
CM
= 0V
1.005
-4.85
V/V
V
V
mA
dB
µA
V/µs
ns
MHz
dB
Output Characteristics
Power Supply Performance
Dynamic Performance
1. Measured over the operating temperature range
2. Slew rate is measured on rising and falling edges
2
ELANTEC [ ELANTEC SEMICONDUCTOR ]
