EL2227C
EL2227C
Dual Very Low Noise Amplifier
Electrical Characteristics
V
S
+= +5V, V
S
- = -5V, R
L
= 500Ω and C
L
= 3pF to 0V, R
F
= 620Ω & T
A
= 25°C unless otherwise specified.
Parameter
Input Characteristics
V
OS
TCV
OS
I
B
R
IN
C
IN
CMIR
CMRR
A
VOL
e
n
i
n
V
OL
V
OH
I
SC
PSRR
I
S
V
S
SR
t
S
BW
HD2
HD3
Input Offset Voltage
Average Offset Voltage Drift
Input Bias Current
Input Impedance
Input Capacitance
Common-Mode Input Range
Common-Mode Rejection Ratio
Open-Loop Gain
Voltage Noise
Current Noise
Output Swing Low
for V
IN
from -4.8V to 3.4V
-5V
≤
V
OUT
≤
5V
f = 100kHz
f = 100kHz
R
L
= 500Ω
R
L
= 250Ω
Output Swing High
Short Circuit Current
Power Supply Rejection Ratio
Supply Current (Per Amplifier)
Operating Range
Slew Rate
[2]
Settling to 0.1% (A
V
= +2)
-3dB Bandwidth
2nd Harmonic Distortion
3rd Harmonic Distortion
±2.5V square wave, measured 25%-75%
(A
V
= +2), V
O =
±1V
R
F
= 358Ω
f = 1MHz, V
O
= 2V
P-P
, R
L
= 500Ω, R
F
= 358Ω
f = 1MHz, V
O
= 2V
P-P
, R
L
= 150Ω, R
F
= 358Ω
f = 1MHz, V
O
= 2V
P-P
, R
L
= 500Ω, R
F
= 358Ω
f = 1MHz, V
O
= 2V
P-P
, R
L
= 150Ω, R
F
= 358Ω
R
L
= 500Ω
R
L
= 250Ω
R
L
= 10Ω
V
S
is moved from ±2.25V to ±12V
No Load
±2.5
35
45
77
90
98
90
94
79
Power Supply Performance
65
95
4.5
5.5
±12
dB
mA
V
V/µS
ns
MHz
dBc
dBc
dBc
dBc
3.5
3.5
60
-4.8
60
70
97
84
1.9
1.2
-3.8
-3.7
3.7
3.6
100
-3.5
-3.5
V
CM
= 0V
[1]
Description
Condition
Min
Typ
0.2
-0.6
Max
3
Unit
mV
µV/°C
µA
MΩ
pF
V
CM
= 0V
-9
-3.7
7.3
1.6
3.4
V
dB
dB
nV/√Hz
pA/√Hz
V
V
V
V
mA
Output Characteristics
Dynamic Performance
3
ELANTEC [ ELANTEC SEMICONDUCTOR ]
