EL2227C
Dual Very Low Noise Amplifier
Electrical Characteristics
VS+= +5V, VS - = -5V, RL = 500W and CL = 3pF to 0V, RF = 620W & TA = 25°C unless otherwise specified.
Parameter
Description
Condition
Min
Typ
Max
Unit
Input Characteristics
VOS
TCVOS
IB
Input Offset Voltage
VCM = 0V
[1]
0.2
-0.6
-3.7
7.3
3
mV
µV/°C
µA
Average Offset Voltage Drift
Input Bias Current
VCM = 0V
-9
RIN
Input Impedance
MW
pF
CIN
Input Capacitance
1.6
CMIR
CMRR
AVOL
en
Common-Mode Input Range
Common-Mode Rejection Ratio
Open-Loop Gain
-4.8
60
3.4
V
for VIN from -4.8V to 3.4V
-5V £ VOUT £ 5V
f = 100kHz
97
84
dB
70
dB
Voltage Noise
1.9
1.2
nV/ÖHz
pA/ÖHz
in
Current Noise
f = 100kHz
Output Characteristics
VOL
VOH
ISC
Output Swing Low
RL = 500W
RL = 250W
RL = 500W
RL = 250W
RL = 10W
-3.8
-3.7
3.7
-3.5
-3.5
V
V
Output Swing High
Short Circuit Current
3.5
3.5
60
V
3.6
V
100
mA
Power Supply Performance
PSRR
IS
Power Supply Rejection Ratio
VS is moved from ±2.25V to ±12V
No Load
65
±2.5
35
95
dB
mA
V
Supply Current (Per Amplifier)
Operating Range
4.5
5.5
VS
±12
Dynamic Performance
SR
Slew Rate[2]
±2.5V square wave, measured 25%-75%
(AV = +2), VO = ±1V
45
77
90
98
90
94
79
V/µS
ns
tS
Settling to 0.1% (AV = +2)
-3dB Bandwidth
BW
HD2
RF = 358W
MHz
dBc
dBc
dBc
dBc
2nd Harmonic Distortion
f = 1MHz, VO = 2VP-P, RL = 500W, RF = 358W
f = 1MHz, VO = 2VP-P, RL = 150W, RF = 358W
f = 1MHz, VO = 2VP-P, RL = 500W, RF = 358W
f = 1MHz, VO = 2VP-P, RL = 150W, RF = 358W
HD3
3rd Harmonic Distortion
3
ELANTEC [ ELANTEC SEMICONDUCTOR ]
