EL2125C - Preliminary
Ultra-low Noise, Low Power, Wideband Amplifier
Electrical Characteristics
VS = ±15V, TA = 25°C, RF = 180W, RG = 20W, RL = 500W unless otherwise specified.
Parameter
Description
Conditions
Min
Typ
Max
Unit
DC Performance
VOS
Input Offset Voltage (SO8 & PDIP8)
Input Offset Voltage (SOT23-5)
Offset Voltage Temperature Coefficient
Input Bias Current
-0.2
2
3
mV
mV
µV/°C
µA
µA
nA/°C
pF
TCVOS
IB
TBD
-21
-30
IOS
Input Bias Current Offset
0.16
TBD
2.2
1
TCIB
Input Bias Current Temperature Coefficient
Input Capacitance
CIN
AVOL
PSRR
CMRR
CMIR
VOUT
VOUTL
Open Loop Gain
75
75
86
dB
[1]
Power Supply Rejection Ratio
95
dB
[2]
Common Mode Rejection Ratio
75
100
dB
Common Mode Input Range
Output Voltage Swing
Output Voltage Swing
TBD
V
No load, RF = 1kW
13.5
V
Positive, RF = 180W, RL = 500W
12.1
-11.3
100
V
Negative
V
[3]
IOUT
IS
Output Short Circuit Current
150
mA
mA
Supply Current
10.8
12
AC Performance - RG = 20W, CL = 5pF
BW
-3dB Bandwidth
220
23
MHz
MHz
MHz
dB
BW ±0.1dB
BW ±1dB
Peaking
SR
±0.1dB Bandwidth
±1dB Bandwidth
63
Peaking
2.5
Slew Rate
VOUT = 2VPP, measured at 20% to 80%
TBD
225
0.6
V/µs
%
OS
Overshoot, 4Vpk-pk Output Square Wave
Settling Time to 0.1% of ±1V Pulse
Voltage Noise Spectral Density
Current Noise Spectral Density
TS
TBD
0.95
2.1
ns
VN
nV/ÖHz
pA/ÖHz
dBc
IN
[4]
HD2
HD3
THD
IMD
2nd Harmonic Distortion
TBD
TBD
TBD
TBD
[4]
3rd Harmonic Distortion
dBc
[5]
Total Harmonic Distortion
dBc
[6]
Intermodulation Distortion
%
1. Measured by moving the supplies from ±13.5V to ±16.5V
2. Measured by moving the inputs from +13.5V to -14.4V
3. Pulse test only
4. Frequency = 10MHz, VOUT = 1Vpk-pk, into 100W and 5pF load
5. Frequency = 20MHz, VOUT = -20dBm (0.0274VRMS) into 500W and 15pF load
6. Two-tone IMD, frequencies = 5MHz and 6MHz at -20dBm output level, RLOAD = 500W and 15pF
3
ELANTEC [ ELANTEC SEMICONDUCTOR ]
