EL2005/EL2005C
High Accuracy Fast Buffer
s
s
TMAX Ð Contd.
e
e
0V, T
MIN
g
DC Electrical Characteristics
V
S
15V, V
IN
T
A
EL2005
Min Typ Max
EL2005C
Parameter Description
Test Conditions
Units
Test
Test
Min Typ Max
Level
Level
e
IN
g
V
O
Output Voltage
Swing
V
14V,
g
g
12.5
12.5
V
V
V
e
R
1 kX
L
e
e
e
100X,
g
25 C
V
T
10.5V, R
IN
L
g
g
g
e
g
9
9.8
19
570
I
I
I
9
9.8
19
570
I
V
§
A
e
I
Supply Current
V
0 (Note 1)
0
22
24
II
II
mA
mW
S
IN
IN
e
PD
Power
V
660
720
Consumption
e
e
e
15V, R 50X, R
S
g
AC Electrical Characteristics
T
25 C, V
§
1 kX
C
S
L
EL2005
Min Typ Max
EL2005C
Parameter
Description
Test Conditions
Units
Test
Test
Min Typ Max
Level
Level
e
e
e
e
g
g
SR
Slew Rate
V
V
10V, V
OUT
5V 1000 1500
III
1000 1500
140
III
V
V/ms
IN
BW
Bandwidth
1 V
rms
140
2
V
MHz
IN
w
Phase
BW
1 MHz to 20 MHz
NL
V
2
V
Degree
Non-Linearity
e
t
t
Rise Time
DV
IN
0.5V
0.5V
2.5
1.0
V
V
2.5
1.0
V
V
ns
ns
r
e
Propagation Delay DV
IN
P
l
1 kHz
HD
Harmonic
Distortion
f
k
k
0.1
0.1
V
I
V
II
II
%
V/V
X
e
e
1 V
rms
A
Voltage Gain
R
S
100X, V
IN
,
V
O
0.97 0.99
1.0
8
0.96 0.99
1.0
9
e
f
1 kHz
e
1 kHz
R
Output Impedance
V
IN
e
1 V ,
rms
4
I
4
f
Note 1: Specification is at 25 C junction temperature due to requirements of high-speed automatic testing. Actual values at operating
§
e
g
25 C. When supply voltages are 15V, no-load operating junction temperatures
temperatures will exceed the value at T
§
J
may rise 40 C to 60 C above ambient and more under load conditions. Accordingly, V may change one to several mV, and
§
§
OS
will change significantly during warm-up. Refer to I vs Temperature graph for expected values.
I
B
B
Note 2: Measured in still air seven minutes after application of power.
b
Note 3: Input bias current is guaranteed over the input range of 10V
s
s
a
V
IN
10V.
3
ELANTEC [ ELANTEC SEMICONDUCTOR ]
