EL2005 EL2005C
High Accuracy Fast Buffer
DC Electrical Characteristics
V
S
e
g
15V
Parameter
Description
Test Conditions
Min
V
O
Output Voltage
Swing
V
IN
e
g
14V
R
L
e
1 kX
V
IN
e
g
10 5V R
L
e
100X
T
A
e
25 C
I
S
PD
Supply Current V
IN
e
0 (Note 1)
Power
Consumption
V
IN
e
0
g
9
V
IN
e
0V T
MIN
s
T
A
s
T
MAX
EL2005
Typ
g
12 5
Contd
EL2005C
Test Units
Level
V
I
24
720
II
II
V
V
mA
mW
TD is 1 7in
TD is 2 5in
Max
Test
Min
Level
V
I
g
9
Typ
g
12 5
Max
g
9 8
g
9 8
19
570
22
660
I
I
19
570
AC Electrical Characteristics
T
C
e
25 C
Parameter
Description
Test Conditions
V
S
e
g
15V R
S
e
50X R
L
e
1 kX
EL2005
Min Typ Max
EL2005C
Test
Test
Min Typ Max
Level
Level
III
V
V
V
V
V
10
8
I
I
0 96
1000 1500
140
2
25
10
k
0 1
Units
SR
BW
w
NL
t
r
t
P
HD
A
V
R
O
Slew Rate
Bandwidth
Phase
Non-Linearity
Rise Time
V
IN
e
g
10V V
OUT
e
g
5V 1000 1500
V
IN
e
1 V
rms
BW
e
1 MHz to 20 MHz
DV
IN
e
0 5V
140
2
25
10
k
0 1
III
V
V
V
V
V
10
9
II
II
V
ms
MHz
Degree
ns
ns
%
V V
X
Propagation Delay
DV
IN
e
0 5V
Harmonic
Distortion
Voltage Gain
f
l
1 kHz
R
S
e
100X V
IN
e
1 V
rms
f
e
1 kHz
0 97
0 99
4
0 99
4
Output Impedance V
IN
e
1 V
rms
f
e
1 kHz
Note 1 Specification is at 25 C junction temperature due to requirements of high-speed automatic testing Actual values at operating
temperatures will exceed the value at T
J
e
25 C When supply voltages are
g
15V no-load operating junction temperatures
may rise 40 C to 60 C above ambient and more under load conditions Accordingly V
OS
may change one to several mV and
I
B
will change significantly during warm-up Refer to I
B
vs Temperature graph for expected values
Note 2 Measured in still air seven minutes after application of power
Note 3 Input bias current is guaranteed over the input range of
b
10V
s
V
IN
s
a
10V
3
ELANTEC [ ELANTEC SEMICONDUCTOR ]
