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EL2001C 参数 Datasheet PDF下载

EL2001C图片预览
型号: EL2001C
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗, 70 MHz的缓冲放大器 [Low Power, 70 MHz Buffer Amplifier]
分类和应用: 缓冲放大器
文件页数/大小: 12 页 / 280 K
品牌: ELANTEC [ ELANTEC SEMICONDUCTOR ]
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EL2001C  
Low Power, 70 MHz Buffer Amplifier  
Power Supplies  
The EL2001 may be operated with single or split  
supplies with total voltage difference between  
Burn-In Circuit  
g
g
10V ( 5V) and 36V ( 18V). It is not necessary  
to use equal split value supplies. For example  
b
a
from 2V to 9V.  
5V and  
b
12V would be excellent for signals  
a
Bypass capacitors from each supply pin to  
ground are highly recommended to reduce supply  
ringing and the interference it can cause. At a  
minimum, 1 mF tantalum capacitor with short  
leads should be used for both supplies.  
2001–9  
Simplified Schematic  
Input Characteristics  
The input to the EL2001 looks like a resistance in  
parallel with about 3.5 picofarads in addition to a  
DC bias current. The DC bias current is due to  
the miss-match in beta and collector current be-  
tween the NPN and PNP transistors connected  
to the input pin. The bias current can be either  
positive or negative. The change in input current  
with input voltage (R ) is affected by the out-  
can  
IN  
put load, beta and the internal boost. R  
IN  
actually appear negative over portions of the in-  
put range; typical input current curves are shown  
in the characteristic curves. Internal clamp di-  
odes from the input to the output are provided.  
These diodes protect the transistor base emitter  
junctions and limit the boost current during slew  
to avoid saturation of internal transistors. The  
g
diodes begin conduction at about 2.5V input to  
output differential. When that happens the input  
resistance drops dramatically. The diodes are rat-  
ed at 50 mA. When conducting they have a series  
resistance of about 20X. There is also 100X in  
series with the input that limits input current.  
200110  
Application Information  
The EL2001 is a monolithic buffer amplifier built  
on Elantec’s proprietary dielectric isolation pro-  
cess that produces NPN and PNP transistors  
with essentially identical DC and AC characteris-  
tics. The EL2001 takes full advantage of the com-  
plementary process with a unique circuit topolo-  
gy.  
g
Above 7.5V differential input to output, addi-  
tional series resistance should be added.  
Source Impedance  
The EL2001 has good input to output isolation.  
When the buffer is not used in a feedback loop,  
capactive and resistive sources up to 1 Meg pres-  
ent no oscillation problems. Care must be used in  
board layout to minimize output to input cou-  
pling. CAUTION: When using high source im-  
Elantec has applied for two patents based on the  
EL2001’s topology. The patents relate to the base  
drive and feedback mechanism in the buffer. This  
feedback makes 2000 V/ms slew rates with 100X  
loads possible with very low supply current.  
l
pedances (R  
100 kX), significant gain errors  
S
can be observed due to output offset, load resis-  
tor, and the action of the boost circuit. See typi-  
cal performance curves.  
7