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8001401ZX 参数 Datasheet PDF下载

8001401ZX图片预览
型号: 8001401ZX
PDF下载: 下载PDF文件 查看货源
内容描述: 快速缓冲放大器 [Fast Buffer Amplifier]
分类和应用: 缓冲放大器放大器电路
文件页数/大小: 12 页 / 244 K
品牌: ELANTEC [ ELANTEC SEMICONDUCTOR ]
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ELH0033G/883/8001401ZX  
Fast Buffer Amplifier  
Absolute Maximum Ratings  
a b  
b
)
V
V
P
Supply Voltage (V  
Input Voltage  
V
40V  
40V  
T
Operating Temperature Range  
ELH0033  
S
A
b
b
a
55 C to 125 C  
§
§
IN  
Power Dissipation (See Curves)  
Continuous Output Current  
Peak Output Current  
1.5W  
T
T
Operating Junction Temperature  
Storage Temperature  
Lead Temperature  
175 C  
a
65 C to 150 C  
§
§
D
J
g
g
I
I
100 mA  
250 mA  
§
OC  
OP  
ST  
(Soldering, 10 seconds)  
300 C  
§
Important Note:  
All parameters having Min/Max specifications are guaranteed. The Test Level column indicates the specific device testing actually  
performed during production and Quality inspection. Elantec performs most electrical tests using modern high-speed automatic test  
e
e
T
A
equipment, specifically the LTX77 Series system. Unless otherwise noted, all tests are pulsed tests, therefore T  
T
.
J
C
Test Level  
Test Procedure  
I
100% production tested and QA sample tested per QA test plan QCX0002.  
e
e
25 C ,  
II  
100% production tested at T  
25 C and QA sample tested at T  
§
§
A
A
T
and T  
per QA test plan QCX0002.  
MIN  
MAX  
QA sample tested per QA test plan QCX0002.  
Parameter is guaranteed (but not tested) by Design and Characterization Data.  
III  
IV  
V
e
Parameter is typical value at T  
25 C for information purposes only.  
§
A
s
s
T
e
e
0V, T  
MIN  
g
DC Electrical Characteristics  
V
S
15V, V  
T
A
IN  
MAX  
ELH0033  
Parameter  
Description  
Test Conditions  
Units  
Test  
Level  
Min  
Typ  
Max  
s
e
V
OS  
Output Offset  
Voltage  
R
T
100 kX,  
25 C (Note 1)  
§
S
5
10  
15  
I
I
mV  
mV  
J
s
R
100 kX  
S
DV /DT  
OS  
Average Temperature  
Coefficient of  
Offset Voltage  
e
R
T
100X  
50  
V
mV/ C  
§
S
e
e
e
e
I
B
Input Bias Current  
25 C (Note 1)  
§
25 C (Note 2)  
§
250  
2.5  
10  
I
IV  
I
pA  
nA  
nA  
J
T
T
A
e
T
A
T
MAX  
J
e
100X, R  
L
A
R
Voltage Gain  
R
S
1 kX,  
V
0.97  
0.98  
1.00  
I
IV  
I
V/V  
X
e
g
V
10V  
IN  
10  
10  
11  
e
Input Impedance  
R
T
1 kX  
10  
IN  
L
e
e
25 C (Note 1),  
§
J
10  
11  
10  
10  
X
R
1 kX  
L
e
e
g
R
Output Impedance  
R
L
1 kX, V  
IN  
1V  
6
10  
I
X
O
e
1 kX  
g
V
O
Output Voltage  
Swing  
V
R
14V,  
IN  
g
12  
I
V
e
L
e
100X, T  
g
V
R
10.5V,  
IN  
g
9
I
V
e
e
25 C  
§
L
A
I
S
Supply Current  
14.5  
20  
22  
I
I
mA  
Power Consumption  
600  
660  
mW  
Note 1: Specification is at 25 C junction temperature due to requirements of high-speed automatic testing. Actual values at operating  
§
e
may rise 40 C60 C above ambient and more under load conditions. Accordingly, V may change one to several mV, and I  
g
25 C. When supply voltages are 15V, no-load operating junction temperature  
temperature will exceed the value at T  
§
J
§
§
OS  
B
will change significantly during warm-up. Refer to I vs temperature graph for expected values.  
B
Note 2: Measured in still air 7 minutes after application of power.  
2