TABLE I. Electrical performance characteristics – Continued.
Conditions 1/
-55 C
T
+125 C
Group A
subgroups
Device
type
Limits
Max
Unit
A
Test
Symbol
unless otherwise specified
Min
300
Slew rate 3/
-SR
7
01
02
V/ s
V
= +5.0 V to -5.0 V,
OUT
R = 1 k , A = 10 V/V,
L
V
measured at –4.0 V to
+4.0 V
8
7
200
300
V
= +5.0 V to -5.0 V,
OUT
R = 1 k , A = 10 V/V,
L
V
measured at –2.5 V to
+2.5 V
8
9
200
Rise time 3/ 5/
Fall time 3/ 5/
Overshoot 3/
All
All
All
30
30
30
30
ns
ns
t
t
V
OUT
= 0 V to +200 mV,
R
F
T = +25 C
A
9
9
V
OUT
= 0 V to –200 mV,
T = +25 C
A
+OS
-OS
V
OUT
= 0 V to +200 mV,
T = +25 C
A
V
OUT
= 0 V to –200 mV,
T = +25 C
A
1/ Unless otherwise specified, V+ = +15 V, V- = -15 V, and C
10 pF. Unless otherwise specified, for dc tests,
L
R = 100 , R = 100 k , V
= 0 V, and for ac tests, A = 10 V/V.
S
L
OUT
V
2/ Quiescent power consumption is based on quiescent supply current test maximum (no load on outputs).
3/ If not tested, shall be guaranteed to the limits specified in table I herein.
4/ Full power bandwidth = SR / ( 2 x x V
).
PEAK
5/ Rise and fall times measured between 10 percent and 90 percent point.
SIZE
STANDARD
MICROCIRCUIT DRAWING
5962-89648
A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
SHEET
A
7
DSCC FORM 2234
APR 97
ELANTEC [ ELANTEC SEMICONDUCTOR ]
