RBV3500 - RBV3510
PRV : 50 - 1000 Volts
Io : 35 Amperes
SILICON BRIDGE RECTIFIERS
RBV25
3.9
±
0.2
C3
30
±
0.3
4.9
±
0.2
∅
3.2
±
0.1
20
±
0.3
FEATURES :
*
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
High case dielectric strength of 2000 V
DC
Ideal for printed circuit board
Very good heat dissipation
+
13.5
±
0.3
~ ~
11
±
0.2
1.0
±
0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
10
7.5 7.5
±0.2 ±0.2 ±0.2
2.0
±
0.2
0.7
±
0.1
Dimensions in millimeters
Rating at 25
°C
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 17.5 Amps.
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
RBV
3500
50
35
50
RBV
3501
100
70
100
RBV
3502
200
140
200
RBV
3504
400
280
400
35
RBV
3506
600
420
600
RBV
3508
800
560
800
17.5
±
0.5
RBV
3510
1000
700
1000
UNIT
Volts
Volts
Volts
Amps.
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
R
θ
JC
T
J
T
STG
400
660
1.1
10
200
1.5
10
- 40 to + 150
Amps.
A
2
S
Volts
µA
µA
°C/W
°C
°C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Notes :
1. Thermal Resistance from junction to case with units mounted on heatsink.
UPDATE : AUGUST 3, 1998
EIC [ EIC DISCRETE SEMICONDUCTORS ]
