SILICON BRIDGE RECTIFIERS
RBV3500 - RBV3510
RBV25
PRV : 50 - 1000 Volts
Io : 35 Amperes
3.9 ± 0.2
C3
30 ± 0.3
4.9 ± 0.2
FEATURES :
Æ 3.2 ± 0.1
* High current capability
* High surge current capability
* High reliability
* Low reverse current
+
~ ~
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
2.0 ± 0.2
0.7 ± 0.1
10
7.5 7.5
±0.2 ±0.2 ±0.2
Dimensions in millimeters
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RBV
RBV
RBV
RBV
RBV
RBV
RBV
SYMBOL
RATING
UNIT
3500 3501 3502 3504 3506 3508 3510
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
35
600
420
600
800
560
800
1000 Volts
700 Volts
Maximum DC Blocking Voltage
100
1000 Volts
Amps.
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
IF(AV)
IFSM
I2t
400
660
1.1
10
Amps.
A2S
Volts
mA
Maximum Forward Voltage per Diode at IF = 17.5 Amps.
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Ta = 25 °C
IR
Ta = 100 °C
IR(H)
200
1.5
10
mA
°C/W
°C
RqJC
TJ
Operating Junction Temperature Range
Storage Temperature Range
TSTG
- 40 to + 150
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on heatsink.
UPDATE : AUGUST 3, 1998
EIC [ EIC DISCRETE SEMICONDUCTORS ]
