SILICON BRIDGE RECTIFIERS
RBV2500 - RBV2510
PRV : 50 - 1000 Volts
Io : 25 Amperes
RBV25
±
3.9 0.2
C3
±
30 0.3
±
4.9 0.2
FEATURES :
* High current capability
* High surge current capability
* High reliability
Æ
±
3.2 0.1
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation
+
~ ~
±
1.0 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
10
7.5 7.5
±
2.0 0.2
±
±
±
0.2 0.2 0.2
±
0.7 0.1
Dimensions in millimeters
* Weight : 7.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
°
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RBV
2500
RBV
2501
RBV
2502
RBV
2504
RBV
2506
RBV
2508
RBV
2510
RATING
SYMBOL
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
200
140
200
400
280
400
25
600
420
600
800
560
800
1000 Volts
700 Volts
1000 Volts
Amps.
70
Maximum DC Blocking Voltage
100
°
F(AV)
I
Maximum Average Forward Current Tc = 55 C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
IFSM
I2t
300
375
1.1
Amps.
A2S
F
VF
Maximum Forward Voltage per Diode at I = 12.5 Amps.
Volts
°
IR
10
m
A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Ta = 25 C
°
IR(H)
200
1.45
m
A
Ta = 100 C
q
°
C/W
R JC
J
T
- 40 to + 150
- 40 to + 150
°
°
Operating Junction Temperature Range
Storage Temperature Range
C
C
TSTG
Notes :
1. Thermal resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate
UPDATE : NOVEMBER 1,1998
EIC [ EIC DISCRETE SEMICONDUCTORS ]
