SILICON BRIDGE RECTIFIERS
GBJ2500 - GBJ2510
RBV25
PRV : 50 - 1000 Volts
Io : 25 Amperes
3.9 ± 0.2
30 ± 0.3
C3
4.9 ± 0.2
Æ 3.2 ± 0.1
FEATURES :
* Glass Passivated Die Construction
* High surge current capability
* High reliability
+ ~ ~
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* High current capability
* Very good heat dissipation
* Pb / RoHS Free
1.0 ± 0.1
2.7 ± 0.2
0.7 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
10
7.5 7.5
±0.2 ±0.2 ±0.2
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
Dimensions in millimeters
* Weight : 8.17 grams ( Approximaly )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
GBJ
2500
GBJ
2501
GBJ
2502
GBJ
2504
GBJ
2506
GBJ
2508
GBJ
2510
SYMBOL
RATING
UNIT
50
35
50
100
70
200
140
200
400
280
400
25
600
420
600
800
560
800
1000
700
VRRM
VRMS
VDC
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
A
100
1000
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 100°C
IF(AV)
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
IFSM
300
510
A
I2t
VF
A2S
V
Current Squared Time at t < 8.3 ms.
1.1
10
Maximum Forward Voltage per Diode at IF = 12.5 A
IR
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
mA
IR(H)
500
0.6
Ta = 100 °C
mA
Thermal Resistance, Junction to Case
Operating Junction Temperature Range
Storage Temperature Range
°C/W
°C
RqJC
TJ
- 40 to + 150
- 40 to + 150
TSTG
°C
Note :
1. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.
Page 1 of 2 Rev. 03 : September 9, 2005
EIC [ EIC DISCRETE SEMICONDUCTORS ]
