TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( BZG03-C10 ~ BZG03-C200 )
FIG.1 - Maximum total power dissipation as a
function of temperature.
FIG.2 - Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
104
4
Ptot
(W)
PZSM
(W)
3
103
2
1
102
10
0
100
10-2
10-1
0
175
1
tp (ms) 10
T, (°C)
Solid line: tie-point temperature.
Tj= 25 °C prior to surge.
Dotted line: ambient temperature; device mounted
on an Al O3 PCB as shown in Fig.5.
2
FIG.4 - Printed-circuit board for surface mounting.
FIG. 3 - Forward current as a function of forward
voltage; typical values.
50
3
IF (A)
4.5
2
50
□ 2.5
1
1.25
0
1
2
0
VF (V)
Dimensions in mm.
Tj= 25 °C.
Page 3 of 3
Rev. 08 : September 18, 2008
EIC [ EIC DISCRETE SEMICONDUCTORS ]
