Certificate TH97/10561QM
Certificate TW00/17276EM
RATINGS AND CHARACTERISTIC CURVES ( BAS19, BAS20, BAS21 )
FIG.1 - MAXIMUM CONTINUOUS FORWARD
CURRENT VS. AMBIENT TEMPERATER
250
FIG.2 - DIODE CAPACITANCE VS. REVERSE
VOLTAGE; TYPICAL VALUES
1.0
FORWARD CURRENT, (mA)
200
0.8
CAPACITANCE, (pF)
150
0.6
100
0.4
50
0.2
f = 1MHz; Tj = 25 °C
0
0
50
0
100
150
200
0
2
4
6
8
AMBIENT TEMPERATURE, (°C)
REVERSE VOLTAGE, (V)
FIG.3 - FORWARD CURRENT VS. FORWARD
VOLTAGE ; TYPICAL VALUES
600
FIG.4 - REVERSE CURRENT VS. JUNCTION
TEMPERATURE; TYPICAL VALUES
100
FORWARD CURRENT, (mA)
T
J
= 150 °C
T
J
= 25 °C
200
REVERSE CURRENT, (µA)
2
400
10
1
0
0
1
0.1
V
R
=V
Rmax
FORWARD VOLTAGE, (V)
0.01
0
50
100
150
200
JUNCTION TEMPERATURE, (°C)
Page 2 of 2
Rev. 01 : May 22, 2006
EIC [ EIC DISCRETE SEMICONDUCTORS ]
