TV30
SURGE RATINGS
Parameter
Conditions
10ms half sine; Tcase = 175oC
VR = 50% VRRM - 1/4 sine
10ms half sine; Tcase =175oC
VR = 0
Max.
4.8
Units
kA
Symbol
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
115 x 106
6.0
A2s
kA
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
180 x 103
A2s
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max. Units
Symbol
Rth(j-c)
Parameter
oC/W
oC/W
dc
Thermal resistance - junction to case
Thermal resistance - case to heatsink
-
-
0.13
0.06
Mounting torque 35.0Nm
with mounting compound
Rth(c-h)
Forward (conducting)
Reverse (blocking)
-
-
175
175
200
35.0
oC
oC
Tvj
Virtual junction temperature
Tstg
-
Storage temperature range
Mounting Torque
-55
30.0
oC
Nm
CHARACTERISTICS
Symbol
Parameter
Forward voltage
Peak reverse current
Conditions
At 1000A peak, Tcase = 25oC
At VRRM, Tcase = 175oC
Typ.
Max.
1.4
20
-
Units
V
VFM
IRRM
QS
IRM
trr
-
-
mA
µC
A
Total stored charge
Peak recovery current
reverse recovery time
Threshold voltage
Slope resistance
300*
90*
6.5*
-
IF = 200A, dIRR/dt = 20A/µs, Tcase = 25˚C
-
-
µs
VTO
rT
At Tvj = 175˚C
At Tvj = 175˚C
0.8
0.6
V
-
mΩ
*Typical values.
2/7
DYNEX [ Dynex Semiconductor ]
