TV18..F
SURGE RATINGS
Conditions
Symbol
Parameter
Max.
3.5
Units
kA
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
10ms half sine; with 0% VRRM, Tj = 150oC
61 x 103
2.8
A2s
kA
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
10ms half sine; with 50% VRRM, Tj = 150oC
39.2x 103
A2s
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max. Units
Parameter
Symbol
Rth(j-c)
oC/W
oC/W
dc
-
-
0.16
0.06
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Mounting torque 35.0Nm
with mounting compound
Rth(c-h)
Tvj
Tstg
-
On-state (conducting)
-
150
175
35.0
oC
oC
Virtual junction temperature
Storage temperature range
-55
30.0
Nm
Mounting torque
CHARACTERISTICS
Symbol
Typ.
Units
V
Parameter
Conditions
At 1000A peak, Tcase = 25oC
At VRRM, Tcase = 150oC
Max.
3.1
VFM
IRRM
trr
Forward voltage
Peak reverse current
-
-
-
50
mA
µs
Reverse recovery time
3.2
QRA1
IRM
K
Recovered charge (50% chord)
Reverse recovery current
Soft factor
IF = 1000A, diRR/dt = 100A/µs
-
-
240
160
-
µC
A
Tcase = 150oC, VR = 100V
1.3
-
VTO
rT
Threshold voltage
At Tvj = 150oC
-
-
-
1.64
1.54
120
V
mΩ
V
Slope resistance
At Tvj = 150oC
VFRM
Forward recovery voltage
di/dt = 1000A/µs, Tj = 125oC
2/8
DYNEX [ Dynex Semiconductor ]
