TK12
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Maximum on-state voltage
Conditions
At 150A peak, Tcase = 25oC
At VRRM/VDRM, Tcase = 125oC
Min.
Max. Units
-
-
-
-
-
-
-
2.0
10
V
VTM
I
RRM/IDRM
dV/dt
Peak reverse and off-state current
mA
V/µs
A/µs
A/µs
V
Maximum linear rate of rise of off-state voltage To 60% VDRM Tj = 125oC, Gate open circuit
200
500
800
1.4
4.0
Repetitive 50Hz
Non-repetitive
Gate source 20V, 20Ω
tr ≤ 0.5µs, Tj = 125˚C
dI/dt
Rate of rise of on-state current
VT(TO)
rT
Threshold voltage
At Tvj = 125oC
At Tvj = 125oC
On-state slope resistance
mΩ
VD = 300V, IG = 1A, IT = 50A, dI/dt = 50A/µs,
dIG/dt = 1A/µs, Tj = 25oC
tgd
Delay time
-
1.5
µs
IL
Latching current
Holding current
Tj = 25oC, VD = 12V
-
-
-
mA
mA
IH
Tj = 25oC, VD = 12V, ITM = 1A
50
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
VGT
Parameter
Gate trigger voltage
Conditions
Typ.
Max. Units
VDRM = 12V, Tcase = 25oC, RL = 6Ω
VDRM = 12V, Tcase = 25oC, RL = 6Ω
At VDRM Tcase = 125oC, RL = 12Ω
-
-
-
-
-
-
-
-
-
3.0
125
0.2
3.0
0.25
5
V
mA
V
IGT
Gate trigger current
VGD
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
VFGM
VFGN
VRGM
IFGM
Anode positive with respect to cathode
Anode negative with respect to cathode
V
V
V
Anode positive with respect to cathode
-
4
A
PGM
16
3
W
W
PG(AV)
Mean gate power
3/8
www.dynexsemi.com