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TK1218M 参数 Datasheet PDF下载

TK1218M图片预览
型号: TK1218M
PDF下载: 下载PDF文件 查看货源
内容描述: 相位控制晶闸管 [Phase Control Thyristor]
分类和应用: 栅极触发装置可控硅整流器
文件页数/大小: 8 页 / 180 K
品牌: DYNEX [ Dynex Semiconductor ]
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TK12  
DYNAMIC CHARACTERISTICS  
Symbol  
Parameter  
Maximum on-state voltage  
Conditions  
At 150A peak, Tcase = 25oC  
At VRRM/VDRM, Tcase = 125oC  
Min.  
Max. Units  
-
-
-
-
-
-
-
2.0  
10  
V
VTM  
I
RRM/IDRM  
dV/dt  
Peak reverse and off-state current  
mA  
V/µs  
A/µs  
A/µs  
V
Maximum linear rate of rise of off-state voltage To 60% VDRM Tj = 125oC, Gate open circuit  
200  
500  
800  
1.4  
4.0  
Repetitive 50Hz  
Non-repetitive  
Gate source 20V, 20Ω  
tr 0.5µs, Tj = 125˚C  
dI/dt  
Rate of rise of on-state current  
VT(TO)  
rT  
Threshold voltage  
At Tvj = 125oC  
At Tvj = 125oC  
On-state slope resistance  
mΩ  
VD = 300V, IG = 1A, IT = 50A, dI/dt = 50A/µs,  
dIG/dt = 1A/µs, Tj = 25oC  
tgd  
Delay time  
-
1.5  
µs  
IL  
Latching current  
Holding current  
Tj = 25oC, VD = 12V  
-
-
-
mA  
mA  
IH  
Tj = 25oC, VD = 12V, ITM = 1A  
50  
GATE TRIGGER CHARACTERISTICS AND RATINGS  
Symbol  
VGT  
Parameter  
Gate trigger voltage  
Conditions  
Typ.  
Max. Units  
VDRM = 12V, Tcase = 25oC, RL = 6Ω  
VDRM = 12V, Tcase = 25oC, RL = 6Ω  
At VDRM Tcase = 125oC, RL = 12Ω  
-
-
-
-
-
-
-
-
-
3.0  
125  
0.2  
3.0  
0.25  
5
V
mA  
V
IGT  
Gate trigger current  
VGD  
Gate non-trigger voltage  
Peak forward gate voltage  
Peak forward gate voltage  
Peak reverse gate voltage  
Peak forward gate current  
Peak gate power  
VFGM  
VFGN  
VRGM  
IFGM  
Anode positive with respect to cathode  
Anode negative with respect to cathode  
V
V
V
Anode positive with respect to cathode  
-
4
A
PGM  
16  
3
W
W
PG(AV)  
Mean gate power  
3/8  
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