RD43FF
SURGE RATINGS
Symbol
Parameter
Test Conditions
10ms half sine, Tcase = 175˚C
VR = 50% VRRM - 1/4 sine
10ms half sine, Tcase = 175˚C
VR = 0
Max.
Units
kA
IFSM
I2t
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
41.2
8.49 x 106
51.5
A2s
kA
Surge (non-repetitive) forward current
I2t for fusing
13.26 x 106 A2s
THERMAL AND MECHANICAL RATINGS
Min.
Symbol
Parameter
Test Conditions
Max. Units
0.022 ˚CW
0.038 ˚CW
0.052 ˚CW
0.004 ˚CW
0.008 ˚CW
-
Rth(j-c)
Thermal resistance - junction to case
Double side cooled
DC
-
Single side cooled
Anode DC
Cathode DC
Double side
-
-
Rth(c-h)
Thermal resistance - case to heatsink
Virtual junction temperature
Clamping force 19.5kN
-
-
(with mounting compound) Single side
Forward (conducting)
Tvj
225
200
200
21.6
˚C
˚C
˚C
kN
Reverse (blocking)
-
–55
17.6
Tstg
Fm
Storage temperature range
Clamping force
CHARACTERISTICS
Min.
Symbol
Parameter
Test Conditions
At VRRM, Tcase = 200˚C
IF = 2000A, dIRR/dt = 3A/µs,
Tcase = 200˚C, VR = 100V
At Tvj = 200˚C
Max. Units
-
-
-
-
-
IRM
Irr
Peak reverse current
50
25
mA
A
Peak reverse recovery current
Total stored charge
Threshold voltage
QS
VTO
rT
150
0.6
µC
V
Slope resistance
At Tvj = 200˚C
0.0514 mΩ
3/7
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DYNEX [ Dynex Semiconductor ]
