MP03TT1250
DYNAMIC CHARACTERISTICS
Parameter
Test Conditions
At VRRM/VDRM, Tj = 125˚C
Min.
Max. Units
Symbol
IRRM/IDRM
dV/dt
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
-
-
-
30
mA
V/µs
A/µs
To 67% VDRM, Tj = 125˚C
From 67% VDRM to 500A, gate source 10V, 5Ω
tr = 0.5µs, Tj = 125˚C
1000
500
dI/dt
Threshold voltage
At Tvj = 125˚C
-
-
0.93
0.67
V
VT(TO)
rT
On-state slope resistance
At Tvj = 125˚C
mΩ
Note: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Units
V
Symbol
VGT
Parameter
Gate trigger voltage
Test Conditions
VDRM = 5V, Tcase = 25oC
Max.
3
mA
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25oC
150
0.25
30
VGD
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
At VDRM Tcase = 125oC
V
VFGM
VFGN
VRGM
IFGM
Anode positive with respect to cathode
V
Anode negative with respect to cathode
0.25
5
-
V
Anode positive with respect to cathode
10
A
See table fig. 5
100
5
W
W
PGM
Mean gate power
-
PG(AV)
3/9
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