DSF20545SF
SURGE RATINGS
Conditions
Symbol
Parameter
Max.
Units
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
16
kA
10ms half sine; with 0% VRRM, Tj = 150oC
1280 x 103 A2s
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
12.8
kA
10ms half sine; with 50% VRRM, Tj = 150oC
10ms half sine; with 100% VRRM, Tj = 150oC
819.2 X 103 A2s
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
-
-
kA
A2s
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max. Units
0.022 oC/W
0.032 oC/W
Parameter
Symbol
dc
Double side cooled
-
-
Rth(j-c)
Anode dc
Thermal resistance - junction to case
Single side cooled
-
-
-
0.032 oC/W
0.004 oC/W
0.008 oC/W
Cathode dc
Double side
Clamping force 15kN
with mounting compound
Thermal resistance - case to heatsink
Rth(c-h)
Single side
oC
oC
kN
Tvj
Tstg
-
On-state (conducting)
-
150
150
21.5
Virtual junction temperature
Storage temperature range
-55
17.5
Clamping force
CHARACTERISTICS
Symbol
Typ.
Units
Parameter
Conditions
At 1800A peak, Tcase = 25oC
At VRRM, Tcase = 150oC
Max.
2.1
VFM
IRRM
trr
Forward voltage
Peak reverse current
-
-
-
V
50
mA
Reverse recovery time
7.0
µs
QRA1
IRM
K
Recovered charge (50% chord)
Reverse recovery current
Soft factor
IF = 1000A, diRR/dt = 100A/µs
-
-
1250
400
-
µC
A
Tcase = 150oC, VR = 100V
1.8
-
VTO
rT
Threshold voltage
At Tvj = 150oC
-
-
-
1.36
0.47
160
V
mΩ
V
Slope resistance
At Tvj = 150oC
VFRM
Forward recovery voltage
di/dt = 1000A/µs, Tj = 125oC
2/8
DYNEX [ Dynex Semiconductor ]
