DS501ST
SURGE RATINGS
Parameter
Conditions
10ms half sine; Tcase = 175oC
VR = 50% VRRM - 1/4 sine
10ms half sine; Tcase = 175oC
VR = 0
Max.
Units
kA
Symbol
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
8.8
387 x 103
11.0
A2s
kA
IFSM
I2t
Surge (non-repetitive) forward current
I2t for fusing
605 x 103
A2s
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max. Units
Symbol
Parameter
Double side cooled
-
0.07
0.14
0.14
0.02
0.04
185
oC/W
oC/W
oC/W
oC/W
oC/W
oC
dc
Rth(j-c)
Anode dc
-
Thermal resistance - junction to case
Single side cooled
-
Cathode dc
Double side
-
Clamping force 4.5kN
with mounting compound
Thermal resistance - case to heatsink
Virtual junction temperature
Rth(c-h)
Single side
-
Forward (conducting)
Reverse (blocking)
-
-
Tvj
175
oC
Tstg
-
Storage temperature range
Clamping force
–55
200
oC
4.0
5.0
kN
CHARACTERISTICS
Symbol
Parameter
Peak reverse current
Threshold voltage
Slope resistance
Conditions
Min.
Max. Units
IRM
VTO
rT
At VRRM, Tcase = 175oC
At Tvj = 175˚C
-
-
-
30
0.7
mA
V
At Tvj = 175˚C
0.25
mΩ
3/5
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