DS1107SG
10000
1000
100
1000
100
10
Conditions:
Tj = 150˚C
Conditions:
Tj = 150˚C
VR = 100V
IF = 1000A
V
R = 100V
IF = 1000A
I
F
Q
S
dI /dt
F
I
RM
0.1
1.0
10
100
0.1
1.0
10
100
Rate of decay of forward current, dIF/dt - (A/µs)
Rate of decay of on-state current, dIF/dt - (A/µs)
Fig.4 Total stored charge
Fig.5 Maximum reverse recovery current
30
25
20
15
10
5
0.1
750
700
650
600
550
500
450
Anode side cooled
I2t = Î2 x t
2
Double side cooled
0.01
I2t
Effective thermal resistance
Junction to case ˚C/W
Conduction
Double side Single side
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
0.032
0.034
0.044
0.057
0.064
0.066
0.076
0.089
0.001
0
1
10
1
2
3
5
10 20
50
0.001
0.01
0.1
1.0
10
Time - (s)
ms
Cycles at 50Hz
Duration
Fig.6 Surge (non-repetitive) forward current vs time (with
50% VRRM at Tcase 150˚C)
Fig.7 Maximum (limit) transient thermal impedance -
junction to case
5/7
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