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DCR604SE20 参数 Datasheet PDF下载

DCR604SE20图片预览
型号: DCR604SE20
PDF下载: 下载PDF文件 查看货源
内容描述: 相位控制晶闸管 [Phase Control Thyristor]
分类和应用: 栅极触发装置可控硅整流器
文件页数/大小: 8 页 / 112 K
品牌: DYNEX [ Dynex Semiconductor ]
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DCR604SE  
DYNAMIC CHARACTERISTICS  
Symbol  
IRRM/IDRM  
dV/dt  
Parameter  
Conditions  
Typ.  
Max. Units  
Peak reverse and off-state current  
At VRRM/VDRM, Tcase = 125oC  
-
-
-
-
-
-
30  
1000  
350  
mA  
V/µs  
A/µs  
A/µs  
V
Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC. Gate open circuit.  
Repetitive 50Hz  
Non-repetitive  
From 67% VDRM to 1100A  
Gate source 20V, 20Ω  
tr 0.5µs, Tj = 125oC  
dI/dt  
Rate of rise of on-state current  
700  
VT(TO)  
rT  
Threshold voltage  
At Tvj = 125oC  
At Tvj = 125oC  
0.93  
0.667  
On-state slope resistance  
mΩ  
VD = 67% VDRM, Gate source 10V, 5Ω  
tr = 0.5µs, Tj = 25oC  
tgd  
Delay time  
-
1.5  
µs  
IL  
Latching current  
Holding current  
Tj = 25oC, VD = 5V  
Tj = 25oC, VD = 5V  
-
-
500  
70  
mA  
mA  
IH  
IT = 500A, tp = 1ms, Tj = 125˚C,  
VR = 50V, dIRR/dt = 20A/µs,  
tq  
Turn-off time  
300  
400  
µs  
VDR = 67% VDRM, dVDR/dt = 20V/µs linear  
GATE TRIGGER CHARACTERISTICS AND RATINGS  
Symbol  
VGT  
Parameter  
Gate trigger voltage  
Conditions  
VDRM = 5V, Tcase = 25oC  
Max. Units  
3.0  
150  
0.25  
30  
V
mA  
V
VDRM = 5V, Tcase = 25oC  
IGT  
Gate trigger current  
VGD  
Gate non-trigger voltage  
Peak forward gate voltage  
Peak forward gate voltage  
Peak reverse gate voltage  
Peak forward gate current  
Peak gate power  
At 67% VDRM Tcase = 125oC  
VFGM  
VFGN  
VRGM  
IFGM  
Anode positive with respect to cathode  
Anode negative with respect to cathode  
V
0.25  
5
V
V
Anode positive with respect to cathode  
See table, gate characteristics curve  
10  
A
PGM  
100  
5
W
W
PG(AV)  
Mean gate power  
4/8  
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