DOMINANT
TM
Semiconductors
Innovating Illumination
InGaN White : 350 mA
Relative Flux Vs Forward Current
Relative Flux; Normalized at 350mA
Relative Flux
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
200
400
600
Relative Intensity Vs Forward Current
Relative Intensity; Normalized at 350mA
Relative Intensity
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
200
400
600
Forward Current, mA
Forward Current, mA
Forward Current Vs Forward Voltage
600
500
Relative Spectral Emission
1
0.9
0.8
Forward Current, mA
Relative Intensity
2
2.5
3
3.5
4
4.5
400
300
200
100
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
400
500
600
700
Forward Voltage, V
Wavelength, nm
Forward Current Vs Ambient Temperature
400
350
Forward Current Vs Solder Point Temperature
400
350
Forward Current, mA
Forward Current, mA
0
20
40
60
80
100
300
250
200
150
100
50
0
300
250
200
150
100
50
0
0
20
40
60
80
100
Ambient Temperature
5
Solder Point Temperature
19/01/2007 V3.0
DOMINANT [ DOMINANT SEMICONDUCTORS ]
