DOMINANT
TM
Semiconductors
Innovating Illumination
InGaN White High Lumens : 350 mA
Relative Flux Vs Forward Current
Relative Flux; Normalized at 350mA
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
200
400
600
Relative Intensity Vs Forward Current
Relative Intensity; Normalized at 350mA
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
200
400
600
Forward Current, mA
Forward Current, mA
Forward Current Vs Forward Voltage
600
500
Relative Spectral Emission
1
0.9
0.8
Forward Current, mA
Relative Intensity
2
2.5
3
3.5
4
4.5
400
300
200
100
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
400
500
600
700
Forward Voltage, V
Wavelength, nm
Forward Current Vs Ambient Temperature (Rja=40K/W)
400
350
Maximum Permissible
Current, Ta=25
Maximum Permissible Pulse
Pulse Current
˚C
1000
900
Forward Current, mA
Pulse Current, mA
0
10
20
30
40
50
60
70
80
90 100
300
250
200
150
100
50
0
800
700
600
500
400
300
200
1
10
100
Ambient Temperature
5
Duty (%); Tp<=0.01 sec
24/07/2007 V3.0
DOMINANT [ DOMINANT SEMICONDUCTORS ]
