TM
DOMINANT
InGaN Warm White High Lumens : 350 mA
Semiconductors
Innovating Illumination
Part Ordering
Number
Luminous Intensity @
IF = 350mA (mcd)
Chip Technology
/ Color
Viewing
Angle˚
NPF-TSD-ABD-1
• NPF-TSD-AB
• NPF-TSD-AC
• NPF-TSD-AD
InGaN
120
9000.0 - 18000.0
9000.0 - 11250.0
11250.0 - 14000.0
14000.0 - 18000.0
NOTE
1. Luminous intensity is measured with an accuracy of ± 11%.
2. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel.
Electrical Characteristics at Ta=25˚C
Vf @ If = 350mA
Part Number
Typ. (V)
Max. (V)
NPF-TSD
3.6
4.0
Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V.
Material
Material
Lead-frame
Package
Cu Alloy With Ag Plating
High Temperature Resistant Plastic, PPA
Silicone Resin
Encapsulant
Soldering Leads
Sn-Sn Plating
13/09/2006 V1.0
2