TM
DOMINANT
AlInGaP : DWx-EJS
Semiconductors
Innovating Illumination
Relative Luminous Intensity Vs Forward Current
Forward Current Vs Forward Voltage
1.6
1.4
1.2
1
2.3
2.2
2.1
2
0.8
0.6
0.4
0.2
0
1.9
1.8
0
10
20
30
40
50
60
70
80
0
20
40
60
80
Forward Current, mA
Forward Current, mA
Allowable Forward Current Vs Duty Ratio
Maximum Current Vs Temperature
Allowable Forward Current Vs Duty Ratio
(Ta=25 Deg C, Tp<10us)
80
70
60
50
40
30
20
10
0
1000
100
10
1
0
10 20 30 40 50 60 70 80 90 100
1
10
100
Ambient Temperature
Duty Ratio, %
Radiation Pattern
30°
20°
10°
0°
1.0
40°
0.8
0.6
0.4
0.2
50°
60°
70°
80°
90°
0
25/06/2007 V5.0
5
DOMINANT [ DOMINANT SEMICONDUCTORS ]
