DOMINANT
TM
Semiconductors
Innovating Illumination
InGaN : DSx-xSx
Electrical Characteristics at Ta=25˚C
Vf @ If = 20mA
Part Number
DSB
Vr @ Ir = 10uA
Max. (V)
3.8
Typ. (V)
2.9
Typ. (V)
3.2
Min. (V)
5.0
DST
2.9
3.4
4.0
5.0
Forward voltage, Vf is measured with an accuracy of ± 0.1 V.
Vf Binning (Optional)
Vf Bin @ 20mA
0A
00
01
02
03
Forward Voltage (V)
2.75 ... 3.05
3.05 ... 3.35
3.35 … 3.65
3.65 … 3.95
3.95 … 4.25
Forward voltage, Vf is measured with an accuracy of ± 0.1 V.
Please consult sales and marketing for special part number to incorporate Vf binning.
Absolute Maximum Ratings
Maximum Value
DC forward current
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005)
Reverse voltage
ESD threshold (HBM)
LED juction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
20
200
5
2
125
-40 … +100
-40 … +100
80
Unit
mA
mA
V
kV
˚C
˚C
˚C
mW
4
03/04/2006 V7.0
DOMINANT [ DOMINANT SEMICONDUCTORS ]
