TM
DOMINANT
InGaN : DDx-xJx
Semiconductors
Innovating Illumination
Electrical Characteristics at Ta=250C
Vf @ If = 20 mA
Typ. (V)
Vr @ Ir = 10 µA
Part Number
Min. (V)
Min. (V)
Max. (V)
DDC, DDB
2.9
2.9
3.2
3.4
3.8
5.0
DDT
4.0
5.0
Forward Voltage, Vf is measured with an accuracy of ± 0.1 V.
Absolute Maximum Ratings
Maximum Value
Unit
DC Forward Current
20
mA
Peak Pulse Current; (tp ≤ 10µs, Duty cycle = 0.005)
DDB = 300
mA
DDC, DDT = 400
Reverse Voltage
5
V
kV
ESD Threshold (HBM)
2
125
LED Junction Temperature
Operating Temperature
˚C
-40 … +100
-40 … +100
85
˚C
Storage Temperature
˚C
Power Dissipation (at room temperature)
Thermal Resistance Junction/Solder Point
mW
K/W
230
07/05/2007 V12.0
5
DOMINANT [ DOMINANT SEMICONDUCTORS ]
